Field dependence of the anomalous Hall effect coefficient of granular alloys with giant Magnetoresistance

JETP Letters ◽  
1997 ◽  
Vol 65 (6) ◽  
pp. 509-513 ◽  
Author(s):  
A. B. Granovskii ◽  
A. V. Kalitsov ◽  
F. Brouers
Keyword(s):  
Hall Effect ◽  
Field Dependence ◽  
Giant Magnetoresistance ◽  
Anomalous Hall Effect ◽  
Granular Alloys

scholarly journals Unusual Field Dependence of the Anomalous Hall Effect in Ta/Tb−Fe−Co

2020 ◽  
Vol 13 (3) ◽  
Author(s):  
M.D. Davydova ◽  
P.N. Skirdkov ◽  
K.A. Zvezdin ◽  
Jong-Ching Wu ◽  
Sheng-Zhe Ciou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Field Dependence ◽  
Anomalous Hall Effect

Anomalous Hall effect in granular alloys

1997 ◽  
Vol 85 (6) ◽  
pp. 1204-1210 ◽  
Author(s):  
A. V. Vedyaev ◽  
A. B. Granovskii ◽  
A. V. Kalitsov ◽  
F. Brouers
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Granular Alloys

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

scholarly journals 2D‐Berry‐Curvature‐Driven Large Anomalous Hall Effect in Layered Topological Nodal‐Line MnAlGe

2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Nodal Line ◽  
Berry Curvature ◽  
Curvature Driven
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