Setup Parameters Controlling the Growth Rate of Silicon Carbide Epitaxial Layers in a Vacuum

2005 ◽  
Vol 50 (4) ◽  
pp. 503
Author(s):  
S. Yu. Davydov
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Epitaxial Layers

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates

1971 ◽  
Vol 9 ◽  
pp. 158-164 ◽  
Author(s):  
D.K. Wickenden ◽  
K.R. Faulkner ◽  
R.W. Brander ◽  
B.J. Isherwood
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Epitaxial Layers

Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers

2003 ◽  
Vol 433-436 ◽  
pp. 281-284 ◽  
Author(s):  
Rositza Yakimova ◽  
Mikael Syväjärvi ◽  
T. Iakimov ◽  
A.O. Okunev ◽  
V.E. Udal'tsov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Defect Formation ◽  
Epitaxial Layers

scholarly journals Macrodefects in Cubic Silicon Carbide Crystals

2010 ◽  
Vol 645-648 ◽  
pp. 375-378 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Justinas Palisaitis ◽  
Remigijus Vasiliauskas ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Temperature Gradient ◽  
Early Stage ◽  
Growth Conditions ◽  
Temperature Ramp ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.

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