The density of states in the mobility gap of amorphous hydrogenated silicon doped with erbium

2005 ◽  
Vol 39 (3) ◽  
pp. 351-353 ◽  
Author(s):  
A. V. Biryukov ◽  
A. G. Kazanskii ◽  
E. I. Terukov ◽  
K. Yu. Khabarova
Keyword(s):  
Density Of States ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Doped ◽  
Mobility Gap

Determination of the Density of States in a-SiC:H from Transient Photoconductivity

1996 ◽  
Vol 420 ◽  
Author(s):  
R. Brüggemann ◽  
C. Maint ◽  
M. Rösch ◽  
D. P. Webb
Keyword(s):  
Density Of States ◽  
Spectroscopic Technique ◽  
Drift Mobility ◽  
Wide Energy Range ◽  
Tail Region ◽  
Hydrogenated Silicon ◽  
Transient Photoconductivity ◽  
Amorphous Hydrogenated Silicon ◽  
Wide Energy ◽  
The Fourier Transform

AbstractIn order to fill the gap of little knowledge about their details, the density of states distributions (DOS) in the upper half of the band gap were determined for a series of wellcharacterised amorphous hydrogenated silicon carbide samples with Tauc gaps between 1.78 and 1.94 eV. A DOS spectroscopic technique, based on the Fourier transform of time-sampled transient photocurrents, allowed the DOS determination on an absolute scale for a wide energy range. The DOS increases in the band tail region with carbon content. It exhibits a minimum at about 0.5 eV which is followed by a defect structure at deeper energies, the density of which also increases with C-content. We find a decreasing time-dependent drift mobility for larger C-content consistent with the lower transit time-determined drift mobility in time-of-flight.

scholarly journals Density of Defect States and Spectra of Defect Absorption in a-Si:H

2019 ◽  
Vol 64 (4) ◽  
pp. 315
Author(s):  
R. G. Ikramov ◽  
M. A. Nuriddinova ◽  
R. M. Jalalov
Keyword(s):  
Absorption Coefficient ◽  
Density Of States ◽  
Spectral Characteristics ◽  
Localized States ◽  
Defect States ◽  
Hydrogenated Silicon ◽  
Principal Role ◽  
Electron Transitions ◽  
Amorphous Hydrogenated Silicon ◽  
Density Of Defect States

Spectral characteristics of the coefficient of defect absorption in amorphous hydrogenated silicon have been studied. The characteristics are determined, by analyzing the electron transitions occurring with the participation of the energy states of dangling bonds. It is shown that the principal role in the formation of the defect absorption coefficient value is played by the electron transitions between defect and non-localized states. It is also shown that the spectral characteristics are mainly determined by the distribution function of the electron density of states in the valence or conduction band. It is found that the maxima in the spectrum of the defect absorption coefficient are observed only if there are pronounced maxima in the density of states at the edges of allowed bands.

Determination of the hydrogen density of states in amorphous hydrogenated silicon

1998 ◽  
Vol 227-230 ◽  
pp. 143-147 ◽  
Author(s):  
W.B Jackson ◽  
A.J Franz ◽  
H.-C Jin ◽  
J.R Abelson ◽  
J.L Gland
Keyword(s):  
Density Of States ◽  
Hydrogenated Silicon ◽  
Hydrogen Density ◽  
Amorphous Hydrogenated Silicon

Pulsed ruby laser accelerated degradation of amorphous hydrogenated silicon

1993 ◽  
Vol 164-166 ◽  
pp. 235-238 ◽  
Author(s):  
O. Klíma ◽  
O. Štika ◽  
Ho Tha Ha ◽  
S. Fouad Abdel Hamied ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Ruby Laser ◽  
Hydrogenated Silicon ◽  
Accelerated Degradation ◽  
Amorphous Hydrogenated Silicon

Initial results and long-term clinical follow-up of an amorphous hydrogenated silicon-carbide-coated stent in daily practice

1998 ◽  
Vol 1 (2) ◽  
pp. 81-85
Author(s):  
Clara EE Hanekamp ◽  
Hans JRM Bonnier ◽  
Rolf H Michels ◽  
Kathinka H Peels ◽  
Eric PCM Heijmen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Daily Practice ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Initial Results

scholarly journals Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

1996 ◽  
Vol 43 (9) ◽  
pp. 1592-1601 ◽  
Author(s):  
S.J. Bijlsma ◽  
H. van Kranenburg ◽  
K.J.B.M. Nieuwesteeg ◽  
M.G. Pitt ◽  
J.F. Verweij
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Electrical Breakdown ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

The density of states in the mobility gap ofa-Si1−x Ge x films

1991 ◽  
Vol 13 (3) ◽  
pp. 273-280
Author(s):  
F. Gozzo ◽  
R. Murri ◽  
N. Pinto ◽  
L. Schiavulli
Keyword(s):  
Density Of States ◽  
Mobility Gap
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