The use of magnesium to dope gallium nitride obtained by molecular-beam epitaxy from activated nitrogen

2003 ◽  
Vol 37 (7) ◽  
pp. 838-842 ◽  
Author(s):  
A. A. Vorob’ev ◽  
V. V. Korablev ◽  
S. Yu. Karpov
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

2012 ◽  
Vol 511 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Kuang-Wei Liu ◽  
Sheng-Joue Young ◽  
Shoou-Jinn Chang ◽  
Tao-Hung Hsueh ◽  
Hung Hung ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Chromium Nitride

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Surface reconstructions of cubic gallium nitride (001) grown by radio frequency nitrogen plasma molecular beam epitaxy under gallium-rich conditions

2006 ◽  
Vol 100 (8) ◽  
pp. 083516 ◽  
Author(s):  
Muhammad B. Haider ◽  
Rong Yang ◽  
Costel Constantin ◽  
Erdong Lu ◽  
Arthur R. Smith ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Nitrogen Plasma ◽  
Surface Reconstructions

Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride

2009 ◽  
Vol 43 (3) ◽  
pp. 403-409 ◽  
Author(s):  
I. A. Bobrovnikova ◽  
I. V. Ivonin ◽  
V. A. Novikov ◽  
V. V. Preobrazhenskii
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Experimental Studies ◽  
Surface Processes

Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride

2004 ◽  
Vol 234 (1-4) ◽  
pp. 445-450 ◽  
Author(s):  
S Vézian ◽  
F Natali ◽  
F Semond ◽  
J Massies
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Kinetic Roughening ◽  
Gas Source

Analysis of gallium nitride growth by gas-source molecular beam epitaxy

1998 ◽  
Vol 187 (3-4) ◽  
pp. 397-401 ◽  
Author(s):  
S.Yu Karpov ◽  
Yu.N Makarov ◽  
M.S Ramm ◽  
R.A Talalaev
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source

Comparison of ion-beam-assisted molecular beam epitaxy with conventional molecular beam epitaxy of thin hexagonal gallium nitride films

2004 ◽  
Vol 264 (1-3) ◽  
pp. 184-191 ◽  
Author(s):  
S Sienz ◽  
J.W Gerlach ◽  
T Höche ◽  
A Sidorenko ◽  
T.G Mayerhöfer ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam

Ion-beam-assisted molecular-beam epitaxy: a method to deposit gallium nitride films with high crystalline quality

2004 ◽  
Vol 458 (1-2) ◽  
pp. 63-66 ◽  
Author(s):  
S. Sienz ◽  
J.W. Gerlach ◽  
T. Höche ◽  
A. Sidorenko ◽  
B. Rauschenbach
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Crystalline Quality ◽  
High Crystalline Quality
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