Resonance reflection of light from two-dimensional superlattice structures

2003 ◽  
Vol 45 (1) ◽  
pp. 176-182 ◽  
Author(s):  
M. M. Voronov ◽  
E. L. Ivchenko
Keyword(s):  
Two Dimensional ◽  
Reflection Of Light ◽  
Superlattice Structures ◽  
Resonance Reflection

scholarly journals Оптические свойства кремниевых нанопилларов со встроенным вертикальным p-n-переходом

2022 ◽  
Vol 56 (3) ◽  
pp. 340
Author(s):  
Л.С. Басалаева ◽  
А.В. Царев ◽  
К.В. Аникин ◽  
С.Л. Вебер ◽  
Н.В. Крыжановская ◽  
...  
Keyword(s):  
Time Domain ◽  
Finite Difference Time Domain ◽  
Three Dimensional ◽  
Polymeric Coating ◽  
Reflection Spectra ◽  
Ordered Arrays ◽  
Reflection Of Light ◽  
Weak Influence ◽  
Difference Time ◽  
Resonance Reflection

Resonance reflection of light from the ordered arrays of silicon nanopillars (Si NP) was investigated. The height of Si NP was 450 nm. The effect of Si NP oxidation in concentrated nitric acid on the position of resonances in reflection spectra was studied. A weak influence of the additional polymeric coating on the characteristics of reflection from the structures was proven. It is established on the basis of the results of experimental investigation and direct numerical modeling by means of three-dimensional finite difference time domain algorithm (3D FDTD) that the dependence of the resonant wavelength for Si NP on the diameter of Si NP is a linear function with nonzero displacement depending on the pitch.

Turbostratic Disorder in [(Bi2Te3)x(TiTe2)y] Superlattices

2003 ◽  
Vol 793 ◽  
Author(s):  
Fred R. Harris ◽  
Stacey Standridge ◽  
Carolyn Feik ◽  
David C. Johnson
Keyword(s):  
Structural Analysis ◽  
Diffraction Data ◽  
Two Dimensional ◽  
Superlattice Structure ◽  
Number Of Layers ◽  
Turbostratic Disorder ◽  
Diffraction Peaks ◽  
Superlattice Structures ◽  
Modulated Elemental Reactant ◽  
Type Of Behavior

ABSTRACTA family of metastable [(Bi2Te3)x(TiTe2)y] superlattices (where × and y denote the number of layers of each of the two components) was prepared by annealing modulated elemental reactant precursors at temperatures below 280°C. Structural analysis by traditional XRD shows the superlattice structures are highly aligned to the substrate with many orders of diffraction peaks from the c direction of the superlattice. Off-axis diffraction techniques presented in this paper suggest that the order between the layers in the a-b direction of these superlattice structures is turbostratic. In this type of behavior, the quasi two-dimensional crystals of Bi2Te3 and TiTe2 that comprise the superlattice structure lie like a deck of cards thrown in disarray on a surface. An analysis of the diffraction data leading to this conclusion is given.

Resonance reflection of light from a ν = 1/3 Laughlin liquid

JETP Letters ◽  
2015 ◽  
Vol 100 (9) ◽  
pp. 581-584 ◽  
Author(s):  
L. V. Kulik ◽  
A. S. Zhuravlev ◽  
V. E. Bisti ◽  
V. E. Kirpichev ◽  
M. N. Khannanov ◽  
...  
Keyword(s):  
Reflection Of Light ◽  
Resonance Reflection

scholarly journals A Microstructural Analysis of 2D Halide Perovskites: Stability and Functionality

2021 ◽  
Vol 3 ◽  
Author(s):  
Susmita Bhattacharya ◽  
Goutam Kumar Chandra ◽  
P. Predeep
Keyword(s):  
Solar Cell ◽  
Microstructural Analysis ◽  
Perovskite Solar Cells ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Photoelectric Conversion ◽  
Flexible Architecture ◽  
Halide Perovskites ◽  
Superlattice Structures ◽  
Low Dimensional

Recent observations have demonstrated that the photoelectric conversion properties of perovskite materials are intimately related to the presence of superlattice structures and other unusual nanoscale features in them. The low-dimensional or mixed-dimensional halide perovskite families are found to be more efficient materials for device application than three-dimensional halide perovskites. The emergence of perovskite solar cells has revolutionized the solar cell industry because of their flexible architecture and rapidly increased efficiency. Tuning the dielectric constant and charge separation are the main objectives in designing a photovoltaic device that can be explored using the two-dimensional perovskite family. Thus, revisiting the fundamental properties of perovskite crystals could reveal further possibilities for recognizing these improvements toward device functionality. In this context, this review discusses the material properties of two-dimensional halide perovskites and related optoelectronic devices, aiming particularly for solar cell applications.

scholarly journals Emergent order in rheoscopic swirls

2010 ◽  
Vol 667 ◽  
pp. 158-187 ◽  
Author(s):  
MICHAEL WILKINSON ◽  
VLAD BEZUGLYY ◽  
BERNHARD MEHLIG
Keyword(s):  
Order Parameter ◽  
Periodic Potential ◽  
Two Dimensional ◽  
One Dimensional ◽  
Emergent Order ◽  
Long Time ◽  
Parameter Field ◽  
Two Dimensional Flow ◽  
Reflection Of Light ◽  
Local Average

We consider the ordering of particles in a rheoscopic fluid (a suspension of microscopic rod-like particles) in a steady two-dimensional flow, and discuss its consequences for the reflection of light. The ordering is described by an order parameter which is a non-oriented vector, obtained by averaging solutions of a nonlinear equation containing the strain rate of the fluid flow. Exact solutions of this equation are obtained from solutions of a linear equation which are analogous to Bloch bands for a one-dimensional Schrödinger equation with a periodic potential. On some contours of the stream function, the order parameter approaches a limit, and on others it depends increasingly sensitively upon position. However, in the long-time limit a local average of the order parameter is a smooth function of position in both cases. We analyse the topology of the order parameter and the structure of the generic zeros of the order parameter field.

Doping-induced contrast in secondary electron images of silicon

1994 ◽  
Vol 52 ◽  
pp. 1024-1025
Author(s):  
David Venables ◽  
Dennis M. Maher
Keyword(s):  
Integrated Circuits ◽  
Secondary Electron ◽  
Lateral Diffusion ◽  
Experimental Information ◽  
Two Dimensional ◽  
Vertical Diffusion ◽  
Band Bending ◽  
The Difference ◽  
Superlattice Structures ◽  
P Type

As device dimensions in integrated circuits continue to decrease to dimensions on the order of 0. 1μm, obtaining two dimensional maps of the dopant distribution becomes increasingly important. In particular, process simulators attempt to predict the extent of both lateral and vertical diffusion of the dopants. However, experimental information on lateral diffusion has been difficult to obtain, although a variety of techniques based on microscopic and electrical data have been attempted. Recently, Perovic et al. showed that direct secondary electron (SE) images of n-i-p-i superlattice structures in Si could be obtained in a field-emission scanning electron microscope (FESEM). They suggested that this “electronic contrast” was due to the difference in band-bending behavior between n and p-type materials at the specimen surface. In this paper, we show that this phenomenon can be exploited to reveal direct two dimensional images of the extent of lateral and vertical diffusion of dopants in patterned silicon wafers. In addition, we show that the contrast exhibited by the doped regions is a strong function of electron beam energy.

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