High power single-mode (λ=1.3–1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructures

2002 ◽  
Vol 36 (11) ◽  
pp. 1308-1314 ◽  
Author(s):  
A. Yu. Leshko ◽  
A. V. Lyutetskii ◽  
N. A. Pikhtin ◽  
S. O. Slipchenko ◽  
Z. N. Sokolova ◽  
...  
2009 ◽  
Vol 39 (1) ◽  
pp. 18-20 ◽  
Author(s):  
Evgeniya I Davydova ◽  
M A Ladugin ◽  
Aleksandr A Marmalyuk ◽  
A A Padalitsa ◽  
A V Petrovskii ◽  
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2009 ◽  
Vol 21 (19) ◽  
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Kyoung Chan Kim ◽  
Dong-Kie Jang ◽  
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Tae Geun Kim ◽  
Woo Won Lee ◽  
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1988 ◽  
Vol 53 (1) ◽  
pp. 1-3 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
T. Sasaki ◽  
H. Yamada ◽  
I. Mito

2003 ◽  
Author(s):  
Zuntu Xu ◽  
Wei Gao ◽  
Alan Nelson ◽  
Kejian Luo ◽  
Haiquan Yang ◽  
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1997 ◽  
Vol 36 (Part 2, No. 8B) ◽  
pp. L1059-L1061 ◽  
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Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
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1997 ◽  
Vol 33 (12) ◽  
pp. 1084 ◽  
Author(s):  
R. Hiroyama ◽  
T. Uetani ◽  
Y. Bessho ◽  
M. Shono ◽  
M. Sawada ◽  
...  

2017 ◽  
Author(s):  
Jukka Viheriälä ◽  
Antti T. Aho ◽  
Heikki Virtanen ◽  
Mervi Koskinen ◽  
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Keyword(s):  

2011 ◽  
Vol 110 (3) ◽  
pp. 033113 ◽  
Author(s):  
A. Martín-Martín ◽  
P. Iñiguez ◽  
J. Jiménez ◽  
M. Oudart ◽  
J. Nagle

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