High power single-mode (λ=1.3–1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructures
2009 ◽
Vol 39
(1)
◽
pp. 18-20
◽
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
1997 ◽
Vol 36
(Part 2, No. 8B)
◽
pp. L1059-L1061
◽
Keyword(s):
Keyword(s):
2017 ◽
Keyword(s):
Keyword(s):