Role of the thermal boundary resistance of the quantum well interfaces on the degradation of high power laser diodes

2011 ◽  
Vol 110 (3) ◽  
pp. 033113 ◽  
Author(s):  
A. Martín-Martín ◽  
P. Iñiguez ◽  
J. Jiménez ◽  
M. Oudart ◽  
J. Nagle
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
High Power Laser ◽  
Power Laser

Cation intermixing at quantum well/barriers interfaces in aged AlGaAs-based high-power laser diodes bars

2005 ◽  
Vol 86 (13) ◽  
pp. 131103 ◽  
Author(s):  
M. Pommiès ◽  
M. Avella ◽  
E. Cánovas ◽  
J. Jiménez ◽  
T. Fillardet ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser

Reliability of 780-nm High-Power Laser Diodes with Thin Quantum Well Active Layer

1991 ◽  
Vol 30 (Part 1, No. 3) ◽  
pp. 493-498 ◽  
Author(s):  
Shin'ichi Nakatsuka ◽  
Sigeo Yamashita ◽  
Kenji Uchida ◽  
Takashi Kajimura
Keyword(s):  
Quantum Well ◽  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser

scholarly journals Tomographic Characterization of Dislocations in Failure Regions of Broad Area InGaAs/AlGaAs Strained Layer Single Quantum Well High Power Laser Diodes

2009 ◽  
Vol 15 (S2) ◽  
pp. 598-599
Author(s):  
B Foran ◽  
N Ives ◽  
T Yeoh ◽  
M Brodie ◽  
Y Sin ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Single Quantum ◽  
High Power Laser ◽  
Power Laser ◽  
Broad Area ◽  
Single Quantum Well ◽  
Strained Layer

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Limitations to brightness in high power laser diodes

2015 ◽  
Author(s):  
P. Crump ◽  
M. Winterfeldt ◽  
J. Decker ◽  
M. Ekterai ◽  
J. Fricke ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser

Thermal condition of high-power laser diodes

2015 ◽  
Vol 42 (3) ◽  
pp. 88-92 ◽  
Author(s):  
V. V. Bezotosnyi ◽  
O. N. Krokhin ◽  
V. A. Oleshchenko ◽  
V. F. Pevtsov ◽  
Yu. M. Popov ◽  
...  
Keyword(s):  
High Power ◽  
Thermal Condition ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser

scholarly journals Double-asymmetric-structure 1.5 μ m high power laser diodes

2019 ◽  
Author(s):  
Lauri Hallman ◽  
Boris S. Ryvkin ◽  
Eugene A. Avrutin ◽  
Antti T. Aho ◽  
Jukka Viheriala ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Asymmetric Structure ◽  
High Power Laser ◽  
Power Laser

Impurity-Induced Layer Disordering in AlxGa1−xAs-GaAs Quantum well Heterostructures -

1988 ◽  
Vol 126 ◽  
Author(s):  
D. G. Deppe ◽  
L. J. Guido ◽  
N. Holonyak
Keyword(s):  
Experimental Data ◽  
Quantum Well ◽  
Laser Diodes ◽  
Growth Direction ◽  
High Power Laser ◽  
Power Laser ◽  
Frenkel Defects ◽  
Buried Heterostructure ◽  
And Diffusion ◽  
Disordered Regions

ABSTRACTSelective interdiffusion of Al and Ga at AlxGa1−x As-GaAs heterointerfaces can be carried out by conventional masking procedures and diffusion of acceptor impurities (e.g., Zn), or donor impurities (e.g., Si), or also by ion implantation. This process, impurity-induced layer disordering (IILD), makes it possible to convert quantum well heterostructures (QWHs) such as AlxGa1−xAs-GaAs superlattices (SLs) into bulk homogeneous AlyGa1−yAs where y is the average Al composition of the QWH or SL. Since th IILY process is maskable and thus selective, heterojunctions can be formed in directions perpendicular to the crystal growth direction, i.e., between as-grown “ordered” and IILD “disordered” regions. To date this process has been used most effectively in the fabrication of buriedheterostructure QW lasers, single and multiple stripe, where the disordered regions provide both optical and electrical confinement. The IILD process has also been used to advantage in the fabrication of high power laser diodes with non-absorbing “windows” at the laser facets and thus with better immunity from facet damage. In this paper we present data on the application of the IILD process to the fabrication of buried-heterostructure QW laser diodes. We also describe possible mechanisms by which the impurity-induced layer disordering proceeds based on Column III “Frenkel” defects and the influence of the crystal Fermi level on the defect solubility. These mechanisms are supported by experimental data.

High-power laser diodes based on asymmetric separate-confinement heterostructures

2005 ◽  
Vol 39 (3) ◽  
pp. 370-373 ◽  
Author(s):  
D. A. Vinokurov ◽  
S. A. Zorina ◽  
V. A. Kapitonov ◽  
A. V. Murashova ◽  
D. N. Nikolaev ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser
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