Solid-phase reactions and the order-disorder phase transition in thin films

2001 ◽  
Vol 46 (6) ◽  
pp. 743-748
Author(s):  
V. G. Myagkov ◽  
L. E. Bykova ◽  
G. N. Bondarenko ◽  
G. V. Bondarenko ◽  
F. V. Myagkov
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Solid Phase ◽  
Disorder Phase Transition ◽  
Solid Phase Reactions

Solid-phase reactions, self-propagating high-temperature synthesis, and order-disorder phase transition in thin films

JETP Letters ◽  
2000 ◽  
Vol 71 (5) ◽  
pp. 183-186 ◽  
Author(s):  
V. G. Myagkov ◽  
L. E. Bykova ◽  
G. N. Bondarenko ◽  
V. S. Zhigalov ◽  
A. I. Pol’skii ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
High Temperature ◽  
Solid Phase ◽  
Temperature Synthesis ◽  
Disorder Phase Transition ◽  
High Temperature Synthesis ◽  
Solid Phase Reactions

Solid phase reactions between Fe thin films and Si-Ge layers on Si

2004 ◽  
Vol 461 (1) ◽  
pp. 81-85 ◽  
Author(s):  
C.H Yu ◽  
Y.L Chueh ◽  
S.W Lee ◽  
S.L Cheng ◽  
L.J Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Solid Phase Reactions

Thermal and Ion Bean Induced Reactions in Ni on BP

1989 ◽  
Vol 162 ◽  
Author(s):  
Naoto Kobayashi ◽  
Yukinobu Kumashiro ◽  
Peter Revesz ◽  
Jian Li ◽  
James W. Mayer
Keyword(s):  
Thin Films ◽  
Crystalline Phase ◽  
Elevated Temperatures ◽  
Solid Phase ◽  
Ion Beam ◽  
Wide Bandgap ◽  
Thermal Reaction ◽  
Thermal Dependence ◽  
Thermal Phase ◽  
Solid Phase Reactions

ABSTRACTThe solid phase reactions of Ni thin films with refractory wide bandgap semiconductor BP(100) were investigated both in the thermal process and the ion beam induced process with RBS, AES, XRD and XPS. In the thermal reaction process, reactions of Ni thin films with BP started around 350°C. Transient metastable phases were observed between 400°C and 450°C. The formation of the fully reacted crystalline phase with the mixture of NiB and Ni3P was observed at 450°C. At elevated temperatures above 600°C, mixture of phases with less Ni content was found to be formed. For the ion beam induced process inhomogeneous reaction was observed at LN2 and the reaction at RT showed an amorphous phase with the same composition as the first thermal phase. The reaction at 200°C induced the same crystalline phase as the first thermal phase. The reacted layer thickness as a function of the ion beam fluence between RT and 300°C increased linearly with the fluence by showing the thermal dependence with an activation energy of Ea=O.31±O, O6eV above 100°C.

Influencing the Solid-Solid Phase Transition in Phenanthrene by Suitable Doping

2000 ◽  
Vol 214 (3) ◽  
Author(s):  
U. Gloistein ◽  
M. Epple ◽  
H.K. Cammenga
Keyword(s):  
Phase Transition ◽  
Solid Phase ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Disorder Phase Transition ◽  
Reversible Transformation ◽  
Polycyclic Aromatic ◽  
Heterocyclic Aromatics

The order-disorder phase transition in solid phenanthrene was studied with differential scanning calorimetry and X-ray powder diffraction. This fully reversible transformation can be influenced by doping phenanthrene with structurally similar polycyclic aromatic hydrocarbons or heterocyclic aromatics. So far, four dopants have been used: benzo[c]cinnoline, phenanthridine, anthracene and carbazole. It was found that the transformation is not influenced by dopants that form eutectic phase diagrams with phenanthrene (benzo[c]cinnoline, phenanthridine). However, if the dopant is incorporated into the phenanthrene lattice to form a mixed crystal, the transition is inhibited above 3.7 mol% anthracene and 6.1 mol% carbazole, respectively. By X-ray diffraction, it is shown that these dopants induce the formation of the high-temperature phase already at room temperature.

Transport properties of CZTS thin films: effect of Cu-Zn disorder

2021 ◽  
Author(s):  
Eleonora Isotta ◽  
Ubaidah Syafiq ◽  
Narges Ataollahi ◽  
Andrea Chiappini ◽  
Claudia Malerba ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Low Temperature ◽  
Transport Properties ◽  
Disorder Phase Transition ◽  
Czts Thin Films

Cu-Zn disorder is known to deeply affect kesterite (Cu2ZnSnS4, CZTS) due to the low temperature order-disorder phase transition, leading to a random occupation of the two cations in the shared...

Solid-phase reactions, self-propagating high-temperature synthesis, and martensitic transformations in thin films

2002 ◽  
Vol 47 (2) ◽  
pp. 95-98 ◽  
Author(s):  
V. G. Myagkov ◽  
L. E. Bykova ◽  
L. A. Li ◽  
I. A. Turpanov ◽  
G. N. Bondarenko
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Solid Phase ◽  
Martensitic Transformations ◽  
Temperature Synthesis ◽  
High Temperature Synthesis ◽  
Solid Phase Reactions
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