The quasiorder-disorder phase transition and peak effect in MgB2 type-II superconducting materials and thin films

2010 ◽  
Vol 19 (1-2) ◽  
pp. 128-135 ◽  
Author(s):  
M.J. Chou ◽  
H.E. Horng
JETP Letters ◽  
2000 ◽  
Vol 71 (5) ◽  
pp. 183-186 ◽  
Author(s):  
V. G. Myagkov ◽  
L. E. Bykova ◽  
G. N. Bondarenko ◽  
V. S. Zhigalov ◽  
A. I. Pol’skii ◽  
...  

Author(s):  
Eleonora Isotta ◽  
Ubaidah Syafiq ◽  
Narges Ataollahi ◽  
Andrea Chiappini ◽  
Claudia Malerba ◽  
...  

Cu-Zn disorder is known to deeply affect kesterite (Cu2ZnSnS4, CZTS) due to the low temperature order-disorder phase transition, leading to a random occupation of the two cations in the shared...


2001 ◽  
Vol 46 (6) ◽  
pp. 743-748
Author(s):  
V. G. Myagkov ◽  
L. E. Bykova ◽  
G. N. Bondarenko ◽  
G. V. Bondarenko ◽  
F. V. Myagkov

2018 ◽  
Vol 98 (2) ◽  
Author(s):  
Enrico La Torre ◽  
Alevtina Smekhova ◽  
Carolin Schmitz-Antoniak ◽  
Katharina Ollefs ◽  
Benedikt Eggert ◽  
...  

JETP Letters ◽  
2008 ◽  
Vol 86 (11) ◽  
pp. 727-729
Author(s):  
E. M. Artem’ev ◽  
M. E. Artem’ev

2001 ◽  
Vol 675 ◽  
Author(s):  
Eugene A. Katz ◽  
David Faiman ◽  
Svetlana Shtutina ◽  
Aleksandra P. Isakina ◽  
Konstantin A. Yagotintsev

ABSTRACTNear the temperature of 260 K, C60 crystal is known to undergo a first order phase transition, associated with changes in molecular rotations. The present paper reports the effect of the crystalline structure and impurity content of C60 thin films on their structural behavior near this phase transition. Polycrystalline C60 films with different grain sizes and oxygen content were obtained by varying the conditions of their vacuum deposition and post-grown exposure. Temperature-resolved X-ray diffraction in the range 300 – 15 K was used to determine the lattice parameter and its changes near the phase transition temperature. Decrease in grain sizes and increase in oxygen content of the films are found to lead to a gradual reduction in the discontinuity in lattice parameter and the transition temperature.


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