Manifestations of Quantum Confinement in Semiconductor Structures with Wide Doped Wells

Abstract Beginning from the 1990s, an ever-lasting interest in the THz spectroscopy and THz instruments has produced wide progress in the development of high-speed THz detectors. The constantly growing requirements aimed at the increase of spectral resolution, sensitivity, and acquisition rate of THz detectors have attracted much attention in this field till nowadays. In the present review, we summarize the most recent advances in the THz photodetectors based on semiconductor structures with quantum confinement of an electron gas. Their main advantages over existing detectors are fast response time, increased spectral resolution, and multicolor operation thanks to the variability of their designs and band structure engineering. These all allow using them in various important applications as single photon detection, THz heterodyne detection, continuous monitoring of toxic gases, THz free space communications, and radio astronomy, as well.

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Quantum Confinement and Piezoresistivity Simulation in 3C-SiC Nanosheet

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.136.465 ◽

2016 ◽

Vol 136 (11) ◽

pp. 465-472 ◽

Cited By ~ 1

Author(s):

Koichi Nakamura

Keyword(s):

Quantum Confinement

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Tunable Quantum Confinement Effect on Non-volatile Thin Film Polymer Memory Device

10.1557/proc-1134-bb05-04 ◽

2008 ◽

Author(s):

Augustin J. Hong ◽

Kang L. Wang ◽

Wei Lek Kwan ◽

Yang Yang ◽

Dayanara Parra ◽

...

Keyword(s):

Thin Film ◽

Quantum Confinement ◽

Quantum Confinement Effect ◽

Memory Device ◽

Confinement Effect ◽

Film Polymer ◽

Polymer Memory

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VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

MRS Proceedings ◽

10.1557/proc-536-305 ◽

1998 ◽

Vol 536 ◽

Cited By ~ 1

Author(s):

N. Ozaki ◽

Y. Ohno ◽

S. Takeda ◽

M. Hirata

Keyword(s):

High Pressure ◽

Growth Condition ◽

Growth Mechanism ◽

Quantum Confinement ◽

Critical Value ◽

Extended Defects ◽

Vapor Liquid Solid ◽

Minimum Diameter ◽

Vls Growth ◽

Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

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Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

MRS Proceedings ◽

10.1557/proc-775-p9.57 ◽

2003 ◽

Vol 775 ◽

Author(s):

Suk-Ho Choi ◽

Jun Sung Bae ◽

Kyung Jung Kim ◽

Dae Won Moon

Keyword(s):

Quantum Confinement ◽

Radiative Recombination ◽

Ion Beam ◽

Quantum Confinement Effect ◽

Visible Range ◽

Ion Beam Sputtering ◽

Transmission Electron ◽

Si Nanocrystals ◽

Beam Sputtering ◽

Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

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