Single-crystal iron garnet films with increased thermal stability of magnetization and ferromagnetic resonance field

2001 ◽  
Vol 27 (2) ◽  
pp. 110-111
Author(s):  
S. I. Yushchuk ◽  
P. S. Kostyuk
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Ferromagnetic Resonance ◽  
Resonance Field ◽  
Garnet Films ◽  
Iron Garnet ◽  
Thermal Stability Of

Iron garnet films with enhanced thermal stability of their magnetic parameters

1998 ◽  
Vol 43 (9) ◽  
pp. 1051-1054 ◽  
Author(s):  
S. I. Yushchuk ◽  
P. S. Kostyuk ◽  
I. E. Lopatinskii
Keyword(s):  
Thermal Stability ◽  
Magnetic Parameters ◽  
Garnet Films ◽  
Iron Garnet ◽  
Thermal Stability Of

Ferromagnetic Resonance in Single Crystal Bismuth Iron Garnet Films

1999 ◽  
Vol 603 ◽  
Author(s):  
V. Denysenkov ◽  
A. Jalali-Roudsar ◽  
N. Adachi ◽  
S. Khartsev ◽  
A. Grishin ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ferromagnetic Resonance ◽  
Faraday Rotation ◽  
Visible Region ◽  
Perpendicular Magnetic Anisotropy ◽  
X Ray Diffraction ◽  
Rotation Effect ◽  
Garnet Films ◽  
Angular Measurements ◽  
Iron Garnet

AbstractAmong other magneto-optic materials bismuth substituted yttrium iron garnet (BixY1−x)3 Fe5O12 has the highest Faraday rotation effect in visible region. Completely substituted bismuth iron garnet Bi3Fe5O12 (BIG) films have been grown by pulsed laser deposition technique onto (111) (NdGd)3(ScGa)5O12 single crystal with lattice constant of 12.623 Å. X-ray diffraction proves epitaxial film quality. VSM measurements yield the saturation magnetization 4πMs, = 1100 G and coercive field is about 50 Oe. Ferromagnetic resonance (FMR) method reveals perpendicular magnetic anisotropy in fabricated films. Angular measurements of FMR give the constants of uniaxial and cubic anisotropy in BIG film: Ku = 5.9×104 erg/cm3 and K1= - 6.95×103 erg/cm3. The Faraday rotation has been found to reach - 7.8 deg/µm at 630 nm.

Thermal stability of the magnetic parameters of epitaxial iron garnet films subjected to planar radial stresses

1997 ◽  
Vol 42 (9) ◽  
pp. 1085-1087
Author(s):  
V. T. Dovgii ◽  
T. G. Astaf’eva ◽  
F. G. Bar’yakhtar ◽  
G. I. Yampol’skaya
Keyword(s):  
Thermal Stability ◽  
Magnetic Parameters ◽  
Garnet Films ◽  
Iron Garnet ◽  
Thermal Stability Of

Thermal stability of indium nitride single crystal films

1993 ◽  
Vol 73 (11) ◽  
pp. 7969-7971 ◽  
Author(s):  
Qixin Guo ◽  
Osamu Kato ◽  
Akira Yoshida
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Indium Nitride ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Thermal Stability Of

Enhancing the thermal stability of switched domains in lithium niobate single-crystal thin films

2020 ◽  
Vol 46 (7) ◽  
pp. 9192-9197 ◽  
Author(s):  
Liaoyuan Zhang ◽  
Wenping Geng ◽  
Xi Chen ◽  
Yimeng Li ◽  
Xiaojun Qiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Lithium Niobate ◽  
Single Crystal ◽  
Lithium Niobate Single Crystal ◽  
Thermal Stability Of

Thermal Stability of CoSi2 on Single Crystal and Polycrystalline Silicon

1990 ◽  
Vol 182 ◽  
Author(s):  
J. R. Phillips ◽  
P. Revesz ◽  
J. O. Olowolafe ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Sheet Resistivity ◽  
X Ray ◽  
Resistivity Measurements ◽  
Silicide Layer ◽  
Thermal Stability Of ◽  
Scanning Electron

AbstractThe thermal stability of Co silicide on single crystal and polycrystalline Si has been investigated. Co films were evaporated onto (100) Si and undoped polycrystalline Si and annealed in vacuum. Resulting silicide films were examined using Rutherford backscattering spectroscopy, scanning electron microscopy, electron—induced x—ray spectroscopy, and sheet resistivity measurements. We find that CoSi2 on single crystal (100) Si remains stable through 1000ºC. In contact with undoped polycrystalline Si, intermixing begins at temperatures as low as 650ºC for 30min annealing. The Co silicide and Si layers are intermixed after 750ºC 30min annealing, giving islands of Si surrounded by silicide material, with both components extending from the surface down to the underlying oxide layer. The behavior of CoSi2 contrasts with results reported for TiSi2 which agglomerates on single crystal Si around 900ºC but is stable on polycrystalline silicon as high as 800ºC. Resistivity measurements show that the Co silicide remained interconnected despite massive incursion by Si into the silicide layer.

Implant isolation of ZnO epitaxial layers

2002 ◽  
Vol 744 ◽  
Author(s):  
S. O. Kucheyev ◽  
C. Jagadish ◽  
J. S. Williams ◽  
P. N. K. Deenapanray ◽  
Mitsuaki Yano ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Single Crystal ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Irradiation Temperature ◽  
Minor Effect ◽  
Electrical Isolation ◽  
Atomic Displacements ◽  
Thermal Stability Of

ABSTRACTThe formation of highly resistive films of single-crystal ZnO as a result of irradiation with MeV Li, O, and Si ions is demonstrated. Results show that the ion doses necessary for electrical isolation close-to-inversely depend on the number of ion-beam-generated atomic displacements. Results show that an increase in the dose of 2 MeV O ions (up to ∼ 2 orders of magnitude above the threshold isolation dose) and irradiation temperature (up to 350 °C) has a relatively minor effect on the thermal stability of electrical isolation, which is limited to temperatures of ∼ 300 — 400 °C. For the case of multiple-energy implantation with keV Cr, Fe, or Ni ions, the evolution of sheet resistance with annealing temperature is consistent with defect-induced isolation, with a relatively minor effect of Cr, Fe, or Ni impurities on the thermal stability of isolation. Based on these results, the mechanism for electrical isolation in ZnO by ion bombardment is discussed.

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