Thermal stability of the magnetic parameters of epitaxial iron garnet films subjected to planar radial stresses

1997 ◽  
Vol 42 (9) ◽  
pp. 1085-1087
Author(s):  
V. T. Dovgii ◽  
T. G. Astaf’eva ◽  
F. G. Bar’yakhtar ◽  
G. I. Yampol’skaya
Keyword(s):  
Thermal Stability ◽  
Magnetic Parameters ◽  
Garnet Films ◽  
Iron Garnet ◽  
Thermal Stability Of

Iron garnet films with enhanced thermal stability of their magnetic parameters

1998 ◽  
Vol 43 (9) ◽  
pp. 1051-1054 ◽  
Author(s):  
S. I. Yushchuk ◽  
P. S. Kostyuk ◽  
I. E. Lopatinskii
Keyword(s):  
Thermal Stability ◽  
Magnetic Parameters ◽  
Garnet Films ◽  
Iron Garnet ◽  
Thermal Stability Of

scholarly journals Improvement of Thermal Stability of Nd-Tb-Fe-Co-B Sintered Magnets by Additions of Pr, Ho, Al, and Cu

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
A. A. Lukin ◽  
E. I. Il'yashenko ◽  
A. T. Skjeltorp ◽  
G. Helgesen
Keyword(s):  
Heat Treatment ◽  
Thermal Stability ◽  
Magnetic Properties ◽  
Thermal Treatment ◽  
Temperature Interval ◽  
Magnetic Parameters ◽  
Sintered Magnets ◽  
Additional Doping ◽  
As Solubility ◽  
Thermal Stability Of

The present work investigates the influence of Pr, Al, Cu, B and Ho which were introduced into the Co-containing sintered magnets of Nd-Dy-Tb-Fe-Co-B type on the magnetic parameters (α, Hci, Br, BHmax⁡). The effect of heat treatment parameters on magnetic properties was also studied. It was revealed that the essential alloying of NdFeB magnets by such elements as Dy, Tb, Ho, Co as well as by boron-forming elements, for example, by titanium, may lead to reducing of F-phase quantity, and, as a consequence, to decreasing of magnetic parameters. It was also shown that additional doping of such alloys by Pr, B, Al and Cu leads to a significant increase of the quantity of F-phase in magnets as well as solubility of the Dy, Tb, Ho and Co in it. This promotes the increase of magnetic parameters. It was possible to attain the following properties for the magnets (Nd0,15Pr0,35Tb0,25Ho0,25)15(Fe0,71Co0,29)bal ⋅ Al0,9Cu0,1B8,5 (at. %) after optimal thermal treatment {1175 K (3,6–7,2 ks) with slow (12–16 ks) cooling to 675 K and subsequently remaining at T=775 K for 3,6 ks—hardening}: Br=0,88 T, Hci=1760 kA/m, BHmax⁡=144 kJ/m3, α<|0,01|%/K in the temperature interval 223–323 K.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Time and thermal stability of magnetic properties of amorphous Fe80TM3B17 alloys

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas
Keyword(s):  
Thermal Stability ◽  
Magnetic Properties ◽  
Thermal Stability Of

Thermal stability of organic-inorganic nanocomposites based on system of dimethacrylate-tetraethoxysilane and their kinetic features

2016 ◽  
Vol 38 (3) ◽  
pp. 211-217
Author(s):  
G.I. Khovanets’ ◽  
◽  
O.Y. Makido ◽  
V.V. Kochubey ◽  
Y.G. Medvedevskikh ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Inorganic Nanocomposites ◽  
Thermal Stability Of ◽  
Kinetic Features
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