Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy

2000 ◽  
Vol 34 (12) ◽  
pp. 1402-1405 ◽  
Author(s):  
N. V. Zotova ◽  
S. S. Kizhaev ◽  
S. S. Molchanov ◽  
T. B. Popova ◽  
Yu. P. Yakovlev
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Long Wavelength ◽  
Wavelength Light

scholarly journals Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Ye Yu ◽  
Tao Wang ◽  
Xiufang Chen ◽  
Lidong Zhang ◽  
Yang Wang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Light Emitting Diodes ◽  
Nitrogen Plasma ◽  
Biaxial Stress ◽  
Organic Chemical ◽  
Graphene Surface ◽  
Light Emitting ◽  
Long Wavelength ◽  
Pre Treatment ◽  
Wavelength Light

AbstractStrain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prepared on SiC substrates by thermal decomposition. Its pre-treatment with nitrogen-plasma can introduce C–N dangling bonds, which provides nucleation sites for subsequent epitaxial growth. The scanning transmission electron microscopy measurements confirm that part of graphene surface was etched by nitrogen-plasma. We study the growth behavior on different areas of graphene surface after pre-treatment, and propose a growth model to explain the epitaxial growth mechanism of GaN films on graphene. Significantly, graphene is found to be effective to reduce the biaxial stress in GaN films and the strain relaxation improves indium-atom incorporation in InGaN/GaN multiple quantum wells (MQWs) active region, which results in the obvious red-shift of light-emitting wavelength of InGaN/GaN MQWs. This work opens up a new way for the fabrication of GaN-based long wavelength light-emitting diodes.

III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy

2010 ◽  
Vol 108 (4) ◽  
pp. 044303 ◽  
Author(s):  
Isaac H. Wildeson ◽  
Robert Colby ◽  
David A. Ewoldt ◽  
Zhiwen Liang ◽  
Dmitri N. Zakharov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Light Emitting

Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy

2019 ◽  
Vol 30 (13) ◽  
pp. 134002 ◽  
Author(s):  
Junichi Motohisa ◽  
Hiroki Kameda ◽  
Masahiro Sasaki ◽  
Katsuhiro Tomioka
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic
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