Enabling High-Injection Current Light-Emitting Diodes Prepared on 10-$\mu \text{m}$ -Thick GaN Films Grown by Hydride Vapor Phase Epitaxy

2015 ◽  
Vol 62 (9) ◽  
pp. 2913-2918 ◽  
Author(s):  
Yu-An Chen ◽  
Chia-Wei Chang ◽  
Cheng-Huang Kuo
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Injection Current ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting ◽  
High Injection

Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates

2006 ◽  
Vol 45 (5A) ◽  
pp. 3905-3908 ◽  
Author(s):  
Michael Kneissl ◽  
Zhihong Yang ◽  
Mark Teepe ◽  
Cliff Knollenberg ◽  
Noble M. Johnson ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting

Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AG06 ◽  
Author(s):  
Gang Seok Lee ◽  
Hunsoo Jeon ◽  
Se-Gyo Jung ◽  
Seon Min Bae ◽  
Min Jung Shin ◽  
...  
Keyword(s):  
Vapor Phase ◽  
White Light ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting ◽  
White Light Emitting Diodes

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 5 (12) ◽  
pp. 122101 ◽  
Author(s):  
Toru Kinoshita ◽  
Keiichiro Hironaka ◽  
Toshiyuki Obata ◽  
Toru Nagashima ◽  
Rafael Dalmau ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1) ◽  
pp. 01AG06 ◽  
Author(s):  
Gang Seok Lee ◽  
Hunsoo Jeon ◽  
Se-Gyo Jung ◽  
Seon Min Bae ◽  
Min Jung Shin ◽  
...  
Keyword(s):  
Vapor Phase ◽  
White Light ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting ◽  
White Light Emitting Diodes

341 nm emission from hydride vapor-phase epitaxy ultraviolet light-emitting diodes

2004 ◽  
Vol 95 (12) ◽  
pp. 8247-8251 ◽  
Author(s):  
G. A. Smith ◽  
T. N. Dang ◽  
T. R. Nelson ◽  
J. L. Brown ◽  
D. Tsvetkov ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

Visible Light-Emitting Diodes Grown by Plasma Assisted Molecular Beam Epitaxy on Hydride Vapor-Phase Epitaxy GaN Templates and the Development of Dichromatic (Phosphorless) White LEDs

2005 ◽  
Vol 892 ◽  
Author(s):  
Jasper S. Cabalu ◽  
Adrian Williams ◽  
Tai-Chou P. Chen ◽  
Ryan France ◽  
Theodore D. Moustakas
Keyword(s):  
Visible Light ◽  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Nitrogen Plasma ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Rf Plasma ◽  
Organic Chemical ◽  
Light Emitting ◽  
White Leds

AbstractMuch of the work on III-Nitride-based LEDs that has been published and applied commercially has been done using metal-organic chemical vapor deposition (MOCVD) as a method of film growth. We report on the growth and fabrication of visible light emitting diodes, by combining hydride vapor-phase epitaxy (HVPE) and rf plasma-assisted MBE (PAMBE) methods. Thick (∼7 μm to 10 μm) HVPE n+-GaN smooth and textured templates, were used as substrates for the growth of LED structures by rf-PAMBE. The active regions of the LED structures, which consist of InGaN/GaN MQWs, were grown using the pulsed nitrogen plasma technique leading to abrupt well and barrier interfaces as confirmed by x-ray diffraction (XRD) measurements. Using this method, we obtained InGaN/GaN MQWs whose room temperature photoluminescence (PL) spectra have a full width at half maximum (FWHM) of 12 nm (105 meV). Visible LEDs on smooth GaN templates emitting in the blue to green were produced with EL spectrum FWHM as narrow as 27 nm. On the other hand, white LEDs without the use of phosphor have been produced utilizing textured MQWs as the active region, a phenomenon we initially attribute to different incorporation of In on the different QW-planes. The growth and fabrication of these devices was preceded by detailed growth and doping studies of the various layers of the LED structure. These include detailed nucleation studies on (0001) sapphire substrates as well as identification of kinetic factors which lead to good crystalline-quality InGaN alloys and InGaN/GaN MQWs.

scholarly journals A bow-free freestanding GaN wafer

RSC Advances ◽  
2020 ◽  
Vol 10 (37) ◽  
pp. 21860-21866
Author(s):  
Jae-Hyoung Shim ◽  
Jin-Seong Park ◽  
Jea-Gun Park
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Brightness ◽  
Light Emitting

For applications as high-brightness light-emitting-diodes, a bow-free freestanding gallium nitride was fabricated by process-designing pit and mirror GaN layers grown via hydride-vapor-phase epitaxy, followed by several polishing and etching methods.

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