The generation-recombination current through a contact of metal with amorphous silicon under the conditions of thermal field ionization in a space-charge region

2000 ◽  
Vol 34 (3) ◽  
pp. 305-307
Author(s):  
P. N. Krylov
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Space Charge Region ◽  
Thermal Field ◽  
Field Ionization ◽  
Recombination Current

Tunneling through the space charge region in a metal-amorphous silicon contact

1986 ◽  
Vol 29 (11) ◽  
pp. 865-868
Author(s):  
V. I. Strikha ◽  
V. V. Il'chenko
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Space Charge Region

About the Nature of Recombination Current in 4H-SiC pn Structures

2006 ◽  
Vol 527-529 ◽  
pp. 1343-1346
Author(s):  
Anatoly M. Strel'chuk ◽  
A.V. Mashichev ◽  
Alexander A. Lebedev ◽  
A.N. Volkova ◽  
Konstantinos Zekentes
Keyword(s):  
Space Charge ◽  
Space Charge Region ◽  
Doping Level ◽  
Deep Level ◽  
Surface Recombination ◽  
Area Ratio ◽  
Pronounced Difference ◽  
Ratio Dependence ◽  
Forward Current ◽  
Recombination Current

The forward current was investigated in 4H-SiC p+n structures grown by sublimation epitaxy. The doping level, Nd-Na, of the n-layer was about (3-4)x1016 cm-3 and the diode area was in the range from 1x10-5 to 2x10-4 cm2. The observed current can be considered as current due to bulk recombination in the space charge region of the pn junction via deep level center or due to surface recombination. The criterion which was performed in this study to differentiate such currents was the investigation of recombination current versus perimeter/area ratio dependence. It was found that no pronounced difference in the recombination current parameters for diodes with different perimeter/area ratio was observed, i.e. current due to surface recombination was not observed for the 4H-SiC pn structures investigated.

scholarly journals Features in the Formation of a Recombination Current in the Space Charge Region of Silicon Solar Cells

2016 ◽  
Vol 61 (10) ◽  
pp. 917-922 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylyov ◽  
V.M. Vlasiuk ◽  
R.M. Korkishko ◽  
...  
Keyword(s):  
Solar Cells ◽  
Space Charge ◽  
Space Charge Region ◽  
Silicon Solar Cells ◽  
Recombination Current

Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

2005 ◽  
Vol 483-485 ◽  
pp. 993-996 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Evgenia V. Kalinina ◽  
Andrey O. Konstantinov ◽  
Anders Hallén
Keyword(s):  
Space Charge ◽  
Neutron Irradiation ◽  
Space Charge Region ◽  
Gamma Ray ◽  
Deep Level ◽  
Current Injection ◽  
High Dose ◽  
Gamma Ray Irradiation ◽  
Recombination Current ◽  
Nonequilibrium Carriers

The effect of gamma-ray and neutron irradiation on recombination current, injection electroluminescense and the value of the lifetime of nonequilibrium carriers for 4H-SiC pn structures was investigated. The irradiation was carried out with gamma-ray (dose 5x106 rad) and 1 MeV neutrons in the doses range from 1.2x1014 cm-2 to 6.24x1014 cm-2. Neutron irradiation with a dose 1.2x1014 cm-2 increased the recombination current, decreased the lifetime for deep-level recombination in the space charge region and decreased the intensity of the edge injection electroluminescense (hnmax » 3.16 eV) by 1.5-2 orders of magnitude; the neutron irradiation with high dose (6.24x1014 cm-2) resulted in increase of the recombination current up to 2 orders of magnitude and decrease of lifetime at least up to 2 orders of magnitude. Gamma-ray irradiation and annealing at temperatures in the range 350-650 K left the recombination current and lifetime practically unchanged.

Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments

2012 ◽  
Vol 358 (17) ◽  
pp. 2007-2010 ◽  
Author(s):  
O.A. Maslova ◽  
M.E. Gueunier-Farret ◽  
J. Alvarez ◽  
A.S. Gudovskikh ◽  
E.I. Terukov ◽  
...  
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Schottky Diodes ◽  
Modeling And Experiments ◽  
Capacitance Spectroscopy ◽  
Charge Capacitance

Space charge region effects in bidirectional illuminated P3HT:PCBM bulk heterojunction photodetectors

2015 ◽  
Vol 22 ◽  
pp. 29-34 ◽  
Author(s):  
Patric Büchele ◽  
Mauro Morana ◽  
Diego Bagnis ◽  
Sandro Francesco Tedde ◽  
David Hartmann ◽  
...  
Keyword(s):  
Space Charge ◽  
Space Charge Region ◽  
Bulk Heterojunction
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