Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm

1997 ◽  
Vol 31 (11) ◽  
pp. 1200 ◽  
Author(s):  
T. N. Danilova
Keyword(s):  
Emission Wavelength ◽  
Double Heterostructures ◽  
Low Threshold ◽  
Mesa Stripe ◽  
Current Tuning

Influence of pumping uniformity on current tuning of the emission wavelength of InAsSb/InAsSbP diode lasers

1998 ◽  
Vol 24 (3) ◽  
pp. 239-241 ◽  
Author(s):  
T. N. Danilova ◽  
O. I. Evseenko ◽  
A. N. Imenkov ◽  
N. M. Kolchanova ◽  
M. V. Stepanov ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Emission Wavelength ◽  
Current Tuning

Low-threshold InGaP/InGaAsP lasers with the emission wavelength 1.02 μm

1996 ◽  
Vol 26 (9) ◽  
pp. 765-766
Author(s):  
V P Duraev ◽  
E T Nedelin ◽  
A V Mel'nikov ◽  
M A Sumarokov ◽  
Viktor A Shishkin
Keyword(s):  
Emission Wavelength ◽  
Low Threshold

Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm

2003 ◽  
Vol 37 (10) ◽  
pp. 1239-1242 ◽  
Author(s):  
I. I. Novikov ◽  
M. V. Maksimov ◽  
Yu. M. Shernyakov ◽  
N. Yu. Gordeev ◽  
A. R. Kovsh ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Efficiency ◽  
Emission Wavelength ◽  
Quantum Dot Lasers ◽  
Temperature Characteristics ◽  
Low Threshold

Realization and Characterization of Optically-Pumped GaInN-DFB Lasers

1996 ◽  
Vol 449 ◽  
Author(s):  
R. Hofmann ◽  
V. Wagner ◽  
H-P. Gauggel ◽  
F. Adler ◽  
P. Ernst ◽  
...  
Keyword(s):  
Grating Period ◽  
Emission Wavelength ◽  
Wavelength Shift ◽  
Optically Pumped ◽  
Laser Threshold ◽  
Organic Vapor ◽  
Double Heterostructures ◽  
Metal Organic ◽  
Laser Activity

ABSTRACTWe demonstrate room temperature laser activity of optically pumped GaN/GalnN-DFB-lasers. The ridge-waveguide DFB lasers were realized on GaN/GalnN double heterostructures grown by low-pressure metal-organic vapor phase epitaxy. The best laser threshold we achieved is 1.9 MW/cm2.By varying the grating period, the laser emission wavelength could be tuned from 399 to 415 nm. This allows to determine the dispersion relation of the effective refractive index neff(λ) and the spectral dependence of the pump power density at the laser threshold Pth(λ) over the whole emission range. Furthermore, the shift of the emission wavelength with temperature of the DFB-lasers is investigated and is found to be small compared to the emission wavelength shift of the gain maximum.

Low-Threshold-Current Operation of High-Mesa Stripe Distributed Reflector Laser Emitting at 1540 nm

2007 ◽  
Vol 46 (No. 44) ◽  
pp. L1068-L1070 ◽  
Author(s):  
Saeed Mahmud Ullah ◽  
Ryo Suemitsu ◽  
SeungHun Lee ◽  
Masato Otake ◽  
Nobuhiko Nishiyama ◽  
...  
Keyword(s):  
Threshold Current ◽  
Low Threshold ◽  
Current Operation ◽  
Mesa Stripe

Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures

1997 ◽  
Vol 23 (1) ◽  
pp. 41-42
Author(s):  
N. V. Zotova ◽  
S. A. Karandashev ◽  
B. A. Matveev ◽  
M. A. Remennyi ◽  
N. M. Stus’ ◽  
...  
Keyword(s):  
Double Heterostructures ◽  
Mesa Stripe

Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

1998 ◽  
Vol 24 (6) ◽  
pp. 472-474
Author(s):  
M. Aidaraliev ◽  
N. V. Zotova ◽  
S. A. Karandashev ◽  
B. A. Matveev ◽  
M. A. Remenny ◽  
...  
Keyword(s):  
Double Heterostructures ◽  
Mesa Stripe
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