Calculation of the size-quantization levels in strained ZnCdSe/ZnSe quantum wells

1997 ◽  
Vol 31 (8) ◽  
pp. 800-803 ◽  
Author(s):  
M. V. Maksimov ◽  
I. L. Krestnikov ◽  
S. V. Ivanov ◽  
N. N. Ledentsov ◽  
S. V. Sorokin
Keyword(s):  
Quantum Wells ◽  
Size Quantization

Study of the effects of size quantization in coupled AlxGa1−x As/GaAs/Alx Ga1−x as quantum wells by means of photoreflectance spectroscopy

2002 ◽  
Vol 93 (6) ◽  
pp. 857-861 ◽  
Author(s):  
L. P. Avakyants ◽  
P. Yu. Bokov ◽  
G. B. Galiev ◽  
V. É. Kaminskii ◽  
V. A. Kul’bachinskii ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Size Quantization ◽  
Photoreflectance Spectroscopy

scholarly journals Электронный транспорт в квантовых ямах AlGaAs/InGaAs/ GaAs РНЕМТ при различных температурах: влияние одностороннего дельта-легирования Si

2018 ◽  
Vol 52 (2) ◽  
pp. 201
Author(s):  
Д.А. Сафонов ◽  
А.Н. Виниченко ◽  
Н.И. Каргин ◽  
И.С. Васильевский
Keyword(s):  
Electron Transport ◽  
Quantum Wells ◽  
Electron Concentration ◽  
Electron Mobility ◽  
Donor Concentration ◽  
Size Quantization ◽  
Spacer Layer ◽  
Impurity Ionization ◽  
Electron Transport Properties ◽  
Nonmonotonic Variation

AbstractThe influence of the concentration of δ doping with Si on the electron transport properties of Al_0.25Ga_0.75As/In_0.2Ga_0.8As/GaAs pseudomorphic quantum wells is studied in a broad temperature range of 4.2–300 K. A decrease in the doping efficiency at an electron concentration of >1.8 × 10^12 cm^–2 is found. This is caused by the effects of incomplete impurity ionization, which is also reflected on the temperature dependence of the electron concentration. A nonmonotonic variation in the electron mobility with increasing donor concentration, which is not associated with filling of the upper subband of size quantization, is observed. An increase in the mobility is associated with a rise in the Fermi momentum and screening, while its subsequent drop with increasing Si concentration is caused by the tunnel degradation of the spacer layer with a decrease in the conduction-band potential in the region of the δ-Si layer.

Growth and Properties of (Al, Ga)As / NiAl / (Al, Ga)As: An Epitaxical Semiconductor / Metal / Semiconductor System

1988 ◽  
Vol 144 ◽  
Author(s):  
T. Sands ◽  
J.P. Harbison ◽  
N. Tabatabaie ◽  
W.K. Chan ◽  
H.L. Gilchrist ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Strong Evidence ◽  
Molecular Beam ◽  
Electron Tunneling ◽  
Compound Semiconductor ◽  
Semiconductor Heterostructures ◽  
Size Quantization ◽  
Lateral Transport ◽  
Semiconductor System

The epitaxical and thermally stable NiAI/(AI, Ga)As system is shown to meet all of the basic materials criteria for buried metal/compound semiconductor heterostructures. We describe the growth of these heterostructures by molecular beam epitaxy. Even the thinnest buried NiAI films grown thus far (1.5 nm) are electrically continuous and metallic. Electron tunneling and lateral transport measurements provide strong evidence for size quantization in NiAl films thinner than 3.5 nm. The merging of compound semiconductor tunneling barriers with epitaxical metallic quantum wells and the ability to selectively contact buried metallic quantum wells is expected to yield novel three-terminal devices.

scholarly journals Рассеяние электронов и дырок глубокими примесями в полупроводниковых гетероструктурах с квантовыми ямами

2020 ◽  
Vol 62 (10) ◽  
pp. 1601
Author(s):  
Ю.А. Померанцев
Keyword(s):  
Quantum Wells ◽  
Wave Functions ◽  
Doping Profile ◽  
Size Quantization ◽  
Carrier Wave ◽  
Potential Approximation ◽  
One Dimensional ◽  
Scattering Rate ◽  
Negative Effective Mass ◽  
Carrier Energy

Electron and hole scattering by deep impurities in gallium arsenide heterostructures with two quantum wells under arbitrary doping profile was considered within the strongly localized potential approximation. The de-pendence of scattering rate on the carrier energy was shown to reproduce the step-like form of the density of states for size quantization subbands of the heterostructure accounting for the contribution of the overlap integral of the carrier wave functions. For hole subbands of negative effective mass the scattering rates at the subband edges have singularities common for one-dimensional systems.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Characterisation of multilayer materials using a position-sensitive atom probe

1990 ◽  
Vol 48 (4) ◽  
pp. 624-625
Author(s):  
RAD Mackenzie ◽  
G D W Smith ◽  
A. Cerezo ◽  
J A Liddle ◽  
CRM Grovenor ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Spatial Information ◽  
Chemical Vapour ◽  
Atom Probe ◽  
Organic Chemical ◽  
Growth Stages ◽  
Multiple Quantum ◽  
Quartz Wool ◽  
Position Sensitive

The position sensitive atom probe (POSAP), described briefly elsewhere in these proceedings, permits both chemical and spatial information in three dimensions to be recorded from a small volume of material. This technique is particularly applicable to situations where there are fine scale variations in composition present in the material under investigation. We report the application of the POSAP to the characterisation of semiconductor multiple quantum wells and metallic multilayers.The application of devices prepared from quantum well materials depends on the ability to accurately control both the quantum well composition and the quality of the interfaces between the well and barrier layers. A series of metal organic chemical vapour deposition (MOCVD) grown GaInAs-InP quantum wells were examined after being prepared under three different growth conditions. These samples were observed using the POSAP in order to study both the composition of the wells and the interface morphology. The first set of wells examined were prepared in a conventional reactor to which a quartz wool baffle had been added to promote gas intermixing. The effect of this was to hold a volume of gas within the chamber between growth stages, leading to a structure where the wells had a composition of GalnAsP lattice matched to the InP barriers, and where the interfaces were very indistinct. A POSAP image showing a well in this sample is shown in figure 1. The second set of wells were grown in the same reactor but with the quartz wool baffle removed. This set of wells were much better defined, as can be seen in figure 2, and the wells were much closer to the intended composition, but still with measurable levels of phosphorus. The final set of wells examined were prepared in a reactor where the design had the effect of minimizing the recirculating volume of gas. In this case there was again further improvement in the well quality. It also appears that the left hand side of the well in figure 2 is more abrupt than the right hand side, indicating that the switchover at this interface from barrier to well growth is more abrupt than the switchover at the other interface.

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