A comparison of the effectiveness of GaAs surface passivation with sodium and ammonium sulfide solutions

1997 ◽  
Vol 39 (1) ◽  
pp. 54-57 ◽  
Author(s):  
V. N. Bessolov ◽  
E. V. Konenkova ◽  
M. V. Lebedev
Keyword(s):  
Surface Passivation ◽  
Gaas Surface ◽  
Ammonium Sulfide

Investigation of Surface Passivation in InAs/GaSb Strained-Layer-Superlattices Using Picosecond Excitation Correlation Measurement and Variable-Area Diode Array Surface Recombination Velocity Measurement

2005 ◽  
Vol 891 ◽  
Author(s):  
Zhimei Zhu ◽  
Elena Plis ◽  
Abdenour Amtout ◽  
Pallab Bhattacharya ◽  
Sanjay Krishna
Keyword(s):  
Infrared Detectors ◽  
Surface Passivation ◽  
Surface Recombination ◽  
Surface States ◽  
Depletion Region ◽  
Surface Recombination Velocity ◽  
Diode Array ◽  
Ammonium Sulfide ◽  
Picosecond Excitation ◽  
Recombination Velocity

ABSTRACTThe effect of ammonium sulfide passivation on InAs/GaSb superlattice infrared detectors was investigated using two complementary techniques, namely, picosecond excitation correlation (PEC) measurement and variable-area diode array (VADA) surface recombination velocity (SRV) measurement. PEC measurements were conducted on etched InAs/GaSb superlattice mesas, which were passivated in aqueous ammonium sulfide solutions of various strengths for several durations. The PEC signal's decay time constant (DTC) is proportional to carrier lifetimes. At 77 K the PEC signal's DTC of the as-grown InAs/GaSb superlattice sample was 2.0 ns, while that of the unpassivated etched sample was reduced to 1.2 ns by the surface states at the mesa sidewalls. The most effective ammonium sulfide passivation process increased the PEC signal's DTC to 10.4 ns. However it is difficult to isolate surface recombination from other processes that contribute to the lifetime using the PEC data, therefore a VADA SRV measurement was undertaken to determine the effect of passivation on surface recombination. The obtained SRV in the depletion region of the InAs/GaSb superlattice and GaSb junction was 1.1×106 cm/s for the unpassivated sample and 4.6×105 cm/s for the passivated sample. At 77 K the highest R0A value measured in our passivated devices was 2540 W cm2 versus 0.22 W cm2 for the unpassivated diodes. The results of the lifetime, the SRV and the R0A measurements indicate that ammonium sulfide passivation will improve the performance of InAs/GaSb superlattice infrared detectors.

GaAs Surface Passivation for Device Applications.

1981 ◽  
Author(s):  
R. W. Grant ◽  
K. R. Elliott ◽  
S. P. Kowalczyk ◽  
D. L. Miller ◽  
J. R. Waldrop
Keyword(s):  
Surface Passivation ◽  
Gaas Surface ◽  
Device Applications

scholarly journals GaAs(100) Surface Passivation with Sulfide and Fluoride Ions

MRS Advances ◽  
2017 ◽  
Vol 2 (51) ◽  
pp. 2915-2920
Author(s):  
Pawan Tyagi
Keyword(s):  
Surface Passivation ◽  
Single Step ◽  
Gaas Surface ◽  
Surface Recombination Velocity ◽  
Double Step ◽  
Fluoride Ions ◽  
Rutherford Back Scattering ◽  
Near Surface ◽  
Photoluminescence Study ◽  
Sulfide Ions

ABSTRACTInteraction of GaAs with sulfur can be immensely beneficial in reducing the deleterious effect of surface states on recombination attributes. Bonding of sulfur on GaAs is also important for developing novel molecular devices and sensors, where a molecular channel can be connected to GaAs surface via thiol functional group. However, the primary challenge lies in increasing the stability and effectiveness of the sulfur passivated GaAs. We have investigated the effect of single and double step surface passivation of n-GaAs(100) by using the sulfide and fluoride ions. Our single-step passivation involved the use of sulfide and fluoride ions individually. However, the two kinds of double-step passivations were performed by treating the n-GaAs surface. In the first approach GaAs surface was firstly treated with sulfide ions and secondly with fluoride ions, respectively. In the second double step approach GaAs surface was first treated with fluoride ions followed by sulfide ions, respectively. Sulfidation was conducted using the nonaqueous solution of sodium sulfide salt. Whereas the passivation steps with fluoride ion was performed with the aqueous solution of ammonium fluoride. Both sulfidation and fluoridation steps were performed either by dipping the GaAs sample in the desired ionic solution or electrochemically. Photoluminescence was conducted to characterize the relative changes in surface recombination velocity due to the single and double step surface passivation. Photoluminescence study showed that the double-step chemical treatment where GaAs was first treated with fluoride ions followed by the sulfide ions yielded the highest improvement. The time vs. photoluminescence study showed that this double-step passivation exhibited lower degradation rate as compared to widely discussed sulfide ion passivated GaAs surface. We also conducted surface elemental analysis using Rutherford Back Scattering to decipher the near surface chemical changes due to the four passivation methodologies we adopted. The double-step passivations affected the shallower region near GaAs surface as compared to the single step passivations.

Optimization of Surface Passivation for InAs-GaSb Infrared Photodetector

2008 ◽  
Vol 2 (1) ◽  
Author(s):  
E. Meyer ◽  
K. Banerjee ◽  
S. Ghosh
Keyword(s):  
Indium Arsenide ◽  
Gallium Antimonide ◽  
Surface Passivation ◽  
Infrared Imaging ◽  
Type Ii ◽  
Infrared Photodetector ◽  
Long Wavelength ◽  
Ammonium Sulfide ◽  
Strained Layer Superlattice ◽  
Long Wavelength Infrared

A type II indium arsenide / gallium antimonide (InAs-GaSb) strained layer superlattice (SLS) semiconductor is optimal for detecting long wavelength infrared (LWIR) signals for infrared imaging applications. However, as with all crystal structures dangling bonds at the surface of the semiconductor must be pacified with a passivant to maintain the integrity of the semiconductor. We report the most effective passivation layer for this III-V semiconductor by examining both the material and device characteristics of the devices pacified by silicon dioxide (SiO2), silicon nitride (SixNy), and zinc sulfide (ZnS). Our final reporting shows ZnS with a pre-passivation of ammonium sulfide ((NH4)2S) as being the most effective passivant.

scholarly journals Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: towards an enhanced diode

2021 ◽  
pp. 152191
Author(s):  
H. Mehdi ◽  
F. Réveret ◽  
C. Robert-Goumet ◽  
L. Bideux ◽  
B. Gruzza ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Gaas Surface ◽  
Air Exposure ◽  
N2 Plasma

Optimization of Surface Preparation and Surface Passivation for GaSb Infrared Photodetectors

2007 ◽  
Vol 1 (1) ◽  
Author(s):  
G. Hearn ◽  
K. Banerjee ◽  
S. Mallick ◽  
S. Ghosh
Keyword(s):  
Surface Passivation ◽  
Surface Preparation ◽  
Infrared Photodetector ◽  
Voltage Measurement ◽  
Field Of Study ◽  
Metal Insulator ◽  
Ammonium Sulfide ◽  
Capacitance Voltage ◽  
Important Field

GaSb can be used as an efficient mid-wavelength infrared photodetector, so its improvement is an important field of study. The passivation of GaSb is not as effective as passivation of other semiconductors. We report on the use of surface treatments of Buffered Oxide Etch (BOE) and ammonium sulfide, and their effect on the quality of ZnS passivation. These treatments are compared using Capacitance-Voltage measurement of metal-insulator-semiconductors structures made from the treated GaSb.

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