scholarly journals Photon superbunching from a generic tunnel junction

2019 ◽  
Vol 5 (5) ◽  
pp. eaav4986 ◽  
Author(s):  
Christopher C. Leon ◽  
Anna Rosławska ◽  
Abhishek Grewal ◽  
Olle Gunnarsson ◽  
Klaus Kuhnke ◽  
...  
Keyword(s):  
Quantum Computing ◽  
Tunnel Junction ◽  
Nanometer Scale ◽  
Single Photons ◽  
Resolution Limit ◽  
Single Electrons ◽  
Instrumental Resolution ◽  
Surface Metal ◽  
Dc Bias ◽  
Inelastic Tunneling

Generating time-correlated photon pairs at the nanoscale is a prerequisite to creating highly integrated optoelectronic circuits that perform quantum computing tasks based on heralded single photons. Here, we demonstrate fulfilling this requirement with a generic tip-surface metal junction. When the junction is luminescing under DC bias, inelastic tunneling events of single electrons produce a stream of visible photons of plasmonic origin whose superbunching index is 17 (improved to a record of 70 by the authors during publication) when measured with a 53-ps instrumental resolution limit. The effect is driven electrically, rather than optically. This discovery has immediate and profound implications for quantum optics and cryptography, notwithstanding its fundamental importance to basic science and its ushering in of heralded photon experiments on the nanometer scale.

scholarly journals Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 638
Author(s):  
Sanam SaeidNahaei ◽  
Hyun-Jun Jo ◽  
Sang Jo Lee ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Electric Fields ◽  
Bias Voltage ◽  
Tunnel Junction ◽  
Photogenerated Carrier ◽  
Internal Electric Field ◽  
Junction Solar Cell ◽  
Photoreflectance Spectroscopy ◽  
Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

Source of Indistinguishable Single Photons Based on Epitaxial InAs/GaAs Quantum Dots for Integration in Quantum Computing Schemes

JETP Letters ◽  
2021 ◽  
Vol 113 (4) ◽  
pp. 252-258
Author(s):  
A. I. Galimov ◽  
M. V. Rakhlin ◽  
G. V. Klimko ◽  
Yu. M. Zadiranov ◽  
Yu. A. Guseva ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Computing ◽  
Single Photons

Approaching the Resolution Limit of Nanometer-Scale Electron Beam-Induced Deposition

Nano Letters ◽  
2005 ◽  
Vol 5 (7) ◽  
pp. 1303-1307 ◽  
Author(s):  
Willem F. van Dorp ◽  
Bob van Someren ◽  
Cornelis W. Hagen ◽  
Pieter Kruit ◽  
Peter A. Crozier
Keyword(s):  
Electron Beam ◽  
Nanometer Scale ◽  
Resolution Limit ◽  
Electron Beam Induced Deposition

scholarly journals Chaotic Quantum Key Distribution

Cryptography ◽  
2020 ◽  
Vol 4 (3) ◽  
pp. 24
Author(s):  
Noah Cowper ◽  
Harry Shaw ◽  
David Thayer
Keyword(s):  
Quantum Computing ◽  
Quantum Key Distribution ◽  
Single Photon ◽  
Photon Emission ◽  
Key Distribution ◽  
Maximum Amount ◽  
Single Photons ◽  
Single Photon Emission ◽  
Amount Of Information ◽  
Communication Scheme

The ability to send information securely is a vital aspect of today’s society, and with the developments in quantum computing, new ways to communicate have to be researched. We explored a novel application of quantum key distribution (QKD) and synchronized chaos which was utilized to mask a transmitted message. This communication scheme is not hampered by the ability to send single photons and consequently is not vulnerable to number splitting attacks like other QKD schemes that rely on single photon emission. This was shown by an eavesdropper gaining a maximum amount of information on the key during the first setup and listening to the key reconciliation to gain more information. We proved that there is a maximum amount of information an eavesdropper can gain during the communication, and this is insufficient to decode the message.

High spin injection polarization at an elevated dc bias in tunnel-junction-based lateral spin valves

2009 ◽  
Vol 95 (2) ◽  
pp. 022519 ◽  
Author(s):  
X. J. Wang ◽  
H. Zou ◽  
L. E. Ocola ◽  
Y. Ji
Keyword(s):  
High Spin ◽  
Tunnel Junction ◽  
Spin Injection ◽  
Spin Valves ◽  
Dc Bias

scholarly journals Instrumental Resolution Limit By Magnetic Thermal Noise From Conductive Parts

2013 ◽  
Vol 19 (S2) ◽  
pp. 598-599 ◽  
Author(s):  
S. Uhlemann ◽  
H. Muller ◽  
P. Hartel ◽  
J. Zach ◽  
M. Haider
Keyword(s):  
Thermal Noise ◽  
Resolution Limit ◽  
Instrumental Resolution

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

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