scholarly journals In situ recombination junction between p-Si and TiO2enables high-efficiency monolithic perovskite/Si tandem cells

2018 ◽  
Vol 4 (12) ◽  
pp. eaau9711 ◽  
Author(s):  
Heping Shen ◽  
Stefan T. Omelchenko ◽  
Daniel A. Jacobs ◽  
Sisir Yalamanchili ◽  
Yimao Wan ◽  
...  
Keyword(s):  
High Efficiency ◽  
Low Cost ◽  
Atomic Layer ◽  
Optical Losses ◽  
Layer Deposition ◽  
Solar Electricity ◽  
The Cost ◽  
Recombination Junction ◽  
Processing Steps

Increasing the power conversion efficiency of silicon (Si) photovoltaics is a key enabler for continued reductions in the cost of solar electricity. Here, we describe a two-terminal perovskite/Si tandem design that increases the Si cell’s output in the simplest possible manner: by placing a perovskite cell directly on top of the Si bottom cell. The advantageous omission of a conventional interlayer eliminates both optical losses and processing steps and is enabled by the low contact resistivity attainable between n-type TiO2and Si, established here using atomic layer deposition. We fabricated proof-of-concept perovskite/Si tandems on both homojunction and passivating contact heterojunction Si cells to demonstrate the broad applicability of the interlayer-free concept. Stabilized efficiencies of 22.9 and 24.1% were obtained for the homojunction and passivating contact heterojunction tandems, respectively, which could be readily improved by reducing optical losses elsewhere in the device. This work highlights the potential of emerging perovskite photovoltaics to enable low-cost, high-efficiency tandem devices through straightforward integration with commercially relevant Si solar cells.

scholarly journals A Low Cost, High Efficiency TMA-Replacement for the Deposition of High-Quality Aluminum Nitride by Atomic Layer Deposition

2020 ◽  
Author(s):  
Sydney Buttera ◽  
Polla Rouf ◽  
Petro Deminskyi ◽  
Nathan O'Brien ◽  
Sean Barry ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
High Efficiency ◽  
Low Cost ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition

Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.

scholarly journals Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

2020 ◽  
Author(s):  
Sydney Buttera ◽  
Polla Rouf ◽  
Petro Deminskyi ◽  
Nathan O'Brien ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
High Efficiency ◽  
Low Cost ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition

Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.

scholarly journals Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

2020 ◽  
Author(s):  
Sydney Buttera ◽  
Polla Rouf ◽  
Petro Deminskyi ◽  
Nathan O'Brien ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
High Efficiency ◽  
Low Cost ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition

Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.

scholarly journals Resolving impurities in atomic layer deposited aluminum nitride through low cost, high efficiency precursor design

2020 ◽  
Author(s):  
Sydney Buttera ◽  
Polla Rouf ◽  
Petro Deminskyi ◽  
Nathan O'Brien ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
High Efficiency ◽  
Low Cost ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition

Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.

Atomic Layer Deposition of LiF and Lithium Ion Conducting (AlF3)(LiF)x Alloys Using Trimethylaluminum, Lithium Hexamethyldisilazide and Hydrogen Fluoride

2017 ◽  
Author(s):  
Younghee Lee ◽  
Daniela M. Piper ◽  
Andrew S. Cavanagh ◽  
Matthias J. Young ◽  
Se-Hee Lee ◽  
...  
Keyword(s):  
Lithium Ion ◽  
Atomic Layer ◽  
Mass Gain ◽  
Alloy Film ◽  
Ex Situ ◽  
X Ray ◽  
Layer Deposition ◽  
Ion Conducting ◽  
Good Agreement

<div>Atomic layer deposition (ALD) of LiF and lithium ion conducting (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloys was developed using trimethylaluminum, lithium hexamethyldisilazide (LiHMDS) and hydrogen fluoride derived from HF-pyridine solution. ALD of LiF was studied using in situ quartz crystal microbalance (QCM) and in situ quadrupole mass spectrometer (QMS) at reaction temperatures between 125°C and 250°C. A mass gain per cycle of 12 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C and decreased at higher temperatures. QMS detected FSi(CH<sub>3</sub>)<sub>3</sub> as a reaction byproduct instead of HMDS at 150°C. LiF ALD showed self-limiting behavior. Ex situ measurements using X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE) showed a growth rate of 0.5-0.6 Å/cycle, in good agreement with the in situ QCM measurements.</div><div>ALD of lithium ion conducting (AlF3)(LiF)x alloys was also demonstrated using in situ QCM and in situ QMS at reaction temperatures at 150°C A mass gain per sequence of 22 ng/(cm<sup>2</sup> cycle) was obtained from QCM measurements at 150°C. Ex situ measurements using XRR and SE showed a linear growth rate of 0.9 Å/sequence, in good agreement with the in situ QCM measurements. Stoichiometry between AlF<sub>3</sub> and LiF by QCM experiment was calculated to 1:2.8. XPS showed LiF film consist of lithium and fluorine. XPS also showed (AlF<sub>3</sub>)(LiF)x alloy consists of aluminum, lithium and fluorine. Carbon, oxygen, and nitrogen impurities were both below the detection limit of XPS. Grazing incidence X-ray diffraction (GIXRD) observed that LiF and (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film have crystalline structures. Inductively coupled plasma mass spectrometry (ICP-MS) and ionic chromatography revealed atomic ratio of Li:F=1:1.1 and Al:Li:F=1:2.7: 5.4 for (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film. These atomic ratios were consistent with the calculation from QCM experiments. Finally, lithium ion conductivity (AlF<sub>3</sub>)(LiF)<sub>x</sub> alloy film was measured as σ = 7.5 × 10<sup>-6</sup> S/cm.</div>

scholarly journals Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jun Yin ◽  
Lian Liu ◽  
Yashu Zang ◽  
Anni Ying ◽  
Wenjie Hui ◽  
...  
Keyword(s):  
High Performance ◽  
Impact Ionization ◽  
Low Cost ◽  
Atomic Layer ◽  
Light Illumination ◽  
Insulation Material ◽  
Defect States ◽  
Uv Illumination ◽  
Layer Deposition ◽  
The Impact

AbstractHere, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

Defect Control for High‐Efficiency Cu 2 ZnSn(S,Se) 4 Solar Cells by Atomic Layer Deposition of Al 2 O 3 on Precursor Film

Solar RRL ◽  
2021 ◽  
pp. 2100181
Author(s):  
Yali Sun ◽  
Pengfei Qiu ◽  
Siyu Wang ◽  
Hongling Guo ◽  
Rutao Meng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
High Efficiency ◽  
Atomic Layer ◽  
Precursor Film ◽  
Layer Deposition ◽  
Defect Control

scholarly journals Surface Passivation of Organometal Halide Perovskite by Atomic Layer Deposition: a Mechanism Investigation Enabling Efficient Inverted Planar Solar Cells

2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
High Efficiency ◽  
Surface Passivation ◽  
Perovskite Solar Cells ◽  
Wide Band ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Halide Perovskite ◽  
Interface Passivation

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...

Sign in / Sign up

Export Citation Format

Share Document