scholarly journals High-speed black phosphorus field-effect transistors approaching ballistic limit

2019 ◽  
Vol 5 (6) ◽  
pp. eaau3194 ◽  
Author(s):  
Xuefei Li ◽  
Zhuoqing Yu ◽  
Xiong Xiong ◽  
Tiaoyang Li ◽  
Tingting Gao ◽  
...  
Keyword(s):  
High Speed ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Black Phosphorus ◽  
Saturation Velocity ◽  
High Drive ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Strong Candidate

As a strong candidate for future electronics, atomically thin black phosphorus (BP) has attracted great attention in recent years because of its tunable bandgap and high carrier mobility. Here, we show that the transport properties of BP device under high electric field can be improved greatly by the interface engineering of high-quality HfLaO dielectrics and transport orientation. By designing the device channels along the lower effective mass armchair direction, a record-high drive current up to 1.2 mA/μm at 300 K and 1.6 mA/μm at 20 K can be achieved in a 100-nm back-gated BP transistor, surpassing any two-dimensional semiconductor transistors reported to date. The highest hole saturation velocity of 1.5 × 107 cm/s is also achieved at room temperature. Ballistic transport shows a record-high 36 and 79% ballistic efficiency at room temperature and 20 K, respectively, which is also further verified by theoretical simulations.

Modeling Trilayer Graphene-Based DET Characteristics for a Nanoscale Sensor

2017 ◽  
pp. 19-38 ◽  
Author(s):  
Meisam Rahmani ◽  
Hediyeh Karimi ◽  
Mohammad Javad Kiani ◽  
Ali Hosseingholi Pourasl ◽  
Komeil Rahmani ◽  
...  
Keyword(s):  
Carrying Capacity ◽  
High Speed ◽  
Graphene Nanoribbon ◽  
Nanoscale Sensor ◽  
Saturation Velocity ◽  
Wide Range ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Trilayer Graphene ◽  
Advanced Applications

Graphene is a promising nanomaterial with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in nanoelectronics [1-3].The application of graphene nanoribbon (GNR) in high-speed electronics is being explored extensively because of some excellent properties such as one-atom thickness, mechanical strength, flexibility, high thermal conductivity up to 50 W cm –1 K –1, extremely highcurrent-carrying capacity up to 10 9 A/cm 2, high carrier mobility in excess of 200,000 cm 2 V –1 s –1, high carrier saturation velocity 3 of ~5×10 7cm s –1, and extraordinarily rapid charge-carrier transportwhich is intrinsically ambipolar, meaning that both positive and negative carriers are important [4-9]. Trilayer graphene nanoribbon (TGN) as one of the most common multilayers of graphene is taken into consideration in this study.

Recent Progress in Black Phosphorus Sensors

2020 ◽  
Vol 16 (7) ◽  
pp. 1045-1064
Author(s):  
Tingting Ma ◽  
Hao Huang ◽  
Wenfei Guo ◽  
Chuanxiang Zhang ◽  
Zhu Chen ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Electrochemical Sensors ◽  
Black Phosphorus ◽  
Synthesis Methods ◽  
Tunable Bandgap ◽  
High Carrier Mobility ◽  
High Carrier ◽  
The Stability ◽  
New Sensors ◽  
Poor Stability

Black phosphorus (BP) is a new two-dimensional material with many unique properties, such as great biocompatibility, excellent surface activity, high carrier mobility, and tunable bandgap. Black phosphorus has been particularly attractive in sensor. However, black phosphorus isolated by traditional methods is easily oxidized and degraded by air, with poor stability, which limits its application as sensors. The modification and functionalization of black phosphorus enhance the stability, sensitivity, selectivity and biocompatibility of its application in sensor. This review describes recent progresses in sensor based on black phosphorus (2016–2020). Firstly, the structure and properties, synthesis methods, modification and functionalization of black phosphorus are briefly described. Then, the advancements in designing of various sensors based on black phosphorus are systematically provided, with a specific focus on electrochemical sensors, electrochemiluminescence sensors and photoelectrochemical sensors. Finally, latest challenges and further opportunities for developing new sensors with black phosphorus nanomaterial are discussed.

scholarly journals High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

AIP Advances ◽  
2013 ◽  
Vol 3 (11) ◽  
pp. 112123 ◽  
Author(s):  
Murali Gedda ◽  
Nimmakayala V. V. Subbarao ◽  
Sk. Md. Obaidulla ◽  
Dipak K. Goswami
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

scholarly journals Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

2016 ◽  
Vol 2 (9) ◽  
pp. e1601240 ◽  
Author(s):  
Gerald J. Brady ◽  
Austin J. Way ◽  
Nathaniel S. Safron ◽  
Harold T. Evensen ◽  
Padma Gopalan ◽  
...  
Keyword(s):  
Current Density ◽  
High Speed ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Oxide Thickness ◽  
Semiconductor Electronics ◽  
Conductance Limit ◽  
Previous State ◽  
Parallel Arrays ◽  
Array Performance

Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because of their exceptional charge transport properties and one-dimensional electrostatics. Ballistic transport approaching the quantum conductance limit of 2G0 = 4e2/h has been achieved in field-effect transistors (FETs) containing one CNT. However, constraints in CNT sorting, processing, alignment, and contacts give rise to nonidealities when CNTs are implemented in densely packed parallel arrays such as those needed for technology, resulting in a conductance per CNT far from 2G0. The consequence has been that, whereas CNTs are ultimately expected to yield FETs that are more conductive than conventional semiconductors, CNTs, instead, have underperformed channel materials, such as Si, by sixfold or more. We report quasi-ballistic CNT array FETs at a density of 47 CNTs μm−1, fabricated through a combination of CNT purification, solution-based assembly, and CNT treatment. The conductance is as high as 0.46 G0 per CNT. In parallel, the conductance of the arrays reaches 1.7 mS μm−1, which is seven times higher than the previous state-of-the-art CNT array FETs made by other methods. The saturated on-state current density is as high as 900 μA μm−1 and is similar to or exceeds that of Si FETs when compared at and equivalent gate oxide thickness and at the same off-state current density. The on-state current density exceeds that of GaAs FETs as well. This breakthrough in CNT array performance is a critical advance toward the exploitation of CNTs in logic, high-speed communications, and other semiconductor electronics technologies.

scholarly journals Design and modeling of a planar graphene structure as a terahertz cyclotron radiation source

2021 ◽  
Author(s):  
Jordan Planillo ◽  
Fabio Alves
Keyword(s):  
Radiation Source ◽  
Carrier Mobility ◽  
Cost Effective ◽  
Total Output ◽  
Saturation Velocity ◽  
Cyclotron Radiation ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Planar Graphene ◽  
Stimulation Of

Abstract With incredibly high carrier mobility and saturation velocity, graphene would be an ideal candidate for a miniaturized solid-state cyclotron radiation source. A planar semicircular graphene arc geometry was investigated for emission in the 0.5 THz to 1.5 THz range. Analytical studies, confirmed by finite element simulations, show that the emitted THz frequencies are inversely proportional to the arc radius given a fixed charge-carrier velocity. The simulations show that the desired frequency spectrum can be obtained with design radii ranging from 50 nm to 150 nm. Interestingly, the radiated spectrum is independent of the frequency of the stimulation of the graphene nano-arcs. The simulations also indicate that the total output power correlates well with the Larmor formulation. The device is expected to emit 1 nW/cm2, which confirms the findings of existing research in this field. Such a design could yield a scalable and cost-effective THz source.

High Carrier Mobility of Organic Field-Effect Transistors with a Thiophene–Naphthalene Mesomorphic Semiconductor

2007 ◽  
Vol 19 (14) ◽  
pp. 1864-1868 ◽  
Author(s):  
K. Oikawa ◽  
H. Monobe ◽  
K. Nakayama ◽  
T. Kimoto ◽  
K. Tsuchiya ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

Theoretical prediction of high carrier mobility in single-walled black phosphorus nanotubes

2018 ◽  
Vol 441 ◽  
pp. 1079-1085 ◽  
Author(s):  
Q.F. Li ◽  
H.F. Wang ◽  
C.H. Yang ◽  
Q.Q. Li ◽  
W.F. Rao
Keyword(s):  
Theoretical Prediction ◽  
Carrier Mobility ◽  
Black Phosphorus ◽  
High Carrier Mobility ◽  
High Carrier

scholarly journals Two-Dimensional Tellurium: Progress, Challenges, and Prospects

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Zhe Shi ◽  
Rui Cao ◽  
Karim Khan ◽  
Ayesha Khan Tareen ◽  
Xiaosong Liu ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
2D Materials ◽  
Environmental Stability ◽  
Synthesis Methods ◽  
Two Dimensional ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Energy Harvesting Devices ◽  
Further Development ◽  
Piezoelectric Devices

AbstractSince the successful fabrication of two-dimensional (2D) tellurium (Te) in 2017, its fascinating properties including a thickness dependence bandgap, environmental stability, piezoelectric effect, high carrier mobility, and photoresponse among others show great potential for various applications. These include photodetectors, field-effect transistors, piezoelectric devices, modulators, and energy harvesting devices. However, as a new member of the 2D material family, much less known is about 2D Te compared to other 2D materials. Motivated by this lack of knowledge, we review the recent progress of research into 2D Te nanoflakes. Firstly, we introduce the background and motivation of this review. Then, the crystal structures and synthesis methods are presented, followed by an introduction to their physical properties and applications. Finally, the challenges and further development directions are summarized. We believe that milestone investigations of 2D Te nanoflakes will emerge soon, which will bring about great industrial revelations in 2D materials-based nanodevice commercialization.

Influence of Temperature Variation on Field Effect Transistor Properties Using a Solution-Processed Liquid Crystalline Semiconductor, 8TNAT8

2016 ◽  
Vol 16 (4) ◽  
pp. 3277-3281
Author(s):  
Hirosato Monobe ◽  
Masaomi Kimoto ◽  
Yo Shimizu
Keyword(s):  
Temperature Variation ◽  
Field Effect ◽  
Liquid Crystalline ◽  
Field Effect Transistors ◽  
Semiconductor Layer ◽  
Influence Of Temperature ◽  
Crystalline Semiconductor ◽  
High Carrier Mobility ◽  
Solution Casting Method ◽  
High Carrier

In this study, we used a liquid crystalline (LC) semiconductor, 8TNAT8, solution (e.g., 0.1 wt% in toluene) for forming an organic semiconductor layer by solution casting method, and fabricated bottom-gate/bottom-contact type field effect transistors (FETs). These LC semiconductors show FET characteristic properties and have high carrier mobility of 0.01 cm2 V−1 s−1. We have investigated the surface morphology and the influence of temperature variation on LC FET properties across the phase transition from crystal to mesophase of a LC semiconductor, 8TNAT8. In the most cases, FET mobility was irreversibly decreased after temperature heat stress above the melting point of 8TNAT8, owing to the morphological change of LC layer.

Sign in / Sign up

Export Citation Format

Share Document