scholarly journals Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

2017 ◽  
Vol 3 (3) ◽  
pp. e1602640 ◽  
Author(s):  
Hendrik Faber ◽  
Satyajit Das ◽  
Yen-Hung Lin ◽  
Nikos Pliatsikas ◽  
Kui Zhao ◽  
...  
2018 ◽  
Vol 30 (40) ◽  
pp. 1804120 ◽  
Author(s):  
Minuk Lee ◽  
Jeong-Wan Jo ◽  
Yoon-Jeong Kim ◽  
Seungbeom Choi ◽  
Sung Min Kwon ◽  
...  

2021 ◽  
Author(s):  
Juhyeok Lee ◽  
Mingyu Jae ◽  
Syed Zahid Hassan ◽  
Dae Sung Chung

Various amidine base with different pKa values are deposited via sublimation, resulting in not only an exceptionally high electron mobility of 37.8 cm2 V−1 s−1 on average (46.6 cm2 V−1 s−1 maximum) but also a high level of bias-stress stability.


2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  

2018 ◽  
Vol 28 (4) ◽  
pp. 247-253
Author(s):  
Dae-Gyu Yang ◽  
Hyoung-Do Kim ◽  
Jong-Heon Kim ◽  
Hyun-Suk Kim

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