Launching the first “Clarity” Machine Learning Challenge to revolutionise hearing device processing

Michael A. Akeroyd; Jon P. Barker; Trevor J. Cox; John Culling; Simone Graetzer; Graham Naylor; Eszter Porter; Rhoddy Viveros Muñoz

doi:10.1121/1.5147514

Launching the first “Clarity” Machine Learning Challenge to revolutionise hearing device processing

The Journal of the Acoustical Society of America ◽

10.1121/1.5147514 ◽

2020 ◽

Vol 148 (4) ◽

pp. 2711-2711

Author(s):

Michael A. Akeroyd ◽

Jon P. Barker ◽

Trevor J. Cox ◽

John Culling ◽

Simone Graetzer ◽

...

Keyword(s):

Machine Learning ◽

Device Processing ◽

Hearing Device

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Mind wandering as data augmentation: How mental travel supports abstraction

Behavioral and Brain Sciences ◽

10.1017/s0140525x1900311x ◽

2020 ◽

Vol 43 ◽

Author(s):

Myrthe Faber

Keyword(s):

Machine Learning ◽

Data Augmentation ◽

Mental Content ◽

Mind Wandering ◽

Theoretical Framework ◽

Important Addition

Abstract Gilead et al. state that abstraction supports mental travel, and that mental travel critically relies on abstraction. I propose an important addition to this theoretical framework, namely that mental travel might also support abstraction. Specifically, I argue that spontaneous mental travel (mind wandering), much like data augmentation in machine learning, provides variability in mental content and context necessary for abstraction.

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Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100151696 ◽

1993 ◽

Vol 51 ◽

pp. 1172-1173

Author(s):

M. Park ◽

S.J. Krause ◽

S.R. Wilson

Keyword(s):

Thin Film ◽

In Situ Tem ◽

Collector Plate ◽

Transmission Electron ◽

Device Processing ◽

Corrosion Susceptibility ◽

Precipitation Phenomena ◽

Semiconductor Chips ◽

Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

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