Resonance ultrasound spectroscopy for studying piezoelectricity and internal friction at elevated temperatures of quartz, langasite, and gallium nitride

2014 ◽  
Vol 135 (4) ◽  
pp. 2217-2217
Author(s):  
Hirotsugu Ogi ◽  
Hassel Ledbetter
Keyword(s):  
Gallium Nitride ◽  
Internal Friction ◽  
Elevated Temperatures

INTERNAL FRICTION ON SILICON BRONZE AT ELEVATED TEMPERATURES

1985 ◽  
Vol 46 (C10) ◽  
pp. C10-395-C10-398
Author(s):  
S. PILECKI ◽  
J. KRÓLIKOWSKI ◽  
R. JEMIELNIAK
Keyword(s):  
Internal Friction ◽  
Elevated Temperatures ◽  
Silicon Bronze

scholarly journals Elastic Properties and Internal Friction of Two Magnesium Alloys at Elevated Temperatures

2011 ◽  
Author(s):  
M. Freels ◽  
P. K. Liaw ◽  
E. Garlea ◽  
J. S. Morrell ◽  
M. Radiovic
Keyword(s):  
Internal Friction ◽  
Magnesium Alloys ◽  
Elastic Properties ◽  
Elevated Temperatures

scholarly journals Internal Friction at Elevated Temperatures and Microplasticity of Aluminum Matrix Composites

2009 ◽  
Vol 3 (2) ◽  
pp. 126-137
Author(s):  
Katsuhiro NISHIYAMA ◽  
Shigenori UTSUMI ◽  
Takanobu NAKAMURA ◽  
Hironori NISHIYAMA
Keyword(s):  
Internal Friction ◽  
Elevated Temperatures ◽  
Aluminum Matrix ◽  
Aluminum Matrix Composites ◽  
Matrix Composites

Package design and development of a low cost high temperature (250°C), high current (50+A), low inductance discrete power package for advanced Silicon Carbide (SiC) and Gallium Nitride (GaN) devices

2013 ◽  
Vol 2013 (1) ◽  
pp. 000592-000597
Author(s):  
B. McPherson ◽  
B. Passmore ◽  
P. Killeen ◽  
D. Martin ◽  
A. Barkley ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
High Temperature ◽  
Power Density ◽  
High Performance ◽  
Elevated Temperatures ◽  
Power Converter ◽  
System Level ◽  
High Current ◽  
Package Design

The demands for high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of post silicon materials, including Silicon Carbide (SiC) and Gallium Nitride (GaN), are numerous, including: high temperature operation, high voltage blocking capability, extremely fast switching, and superior energy efficiency. These advantages, however, are severely limited by conventional power packages, particularly at temperatures higher than 175°C and >100 kHz switching speeds. In this discussion, APEI, Inc. presents the design of a newly developed discrete package specifically intended for high performance, high current (>50A), rapid switching, and extended temperature (>250°C) wide band gap devices which are now readily available on the commercial market at voltages exceeding 1200V. Finite element analysis (FEA) results will be presented to illustrate the modeling process, design tradeoffs, and critical decisions fundamental to a high performance package design. A low profile design focuses on reducing parasitic impedances which hinder high speed switching. A notable increase in the switching speed and frequency reduces the size and volume of associated filtering components in a power converter. Operating at elevated temperatures reduces the requirements of the heat removal system, ultimately allowing for a substantial increase in the power density. Highlights of these packages include the flexibility to house a variety of device sizes and types, co-packaged antiparallel diodes, a terminal layout designed to allow rapid system configuration (for paralleling or creating half- and full-bridge topologies), and a novel wire bondless backside cooled construction for lateral GaN HEMT devices. Specific focus was placed on minimizing the cost of the materials and fabrication processes of the package components. The design of the package is discussed in detail. High temperature testing of a SiC assembly and electrical test results of a high frequency GaN based boost converter will be presented to demonstrate system level performance advantages.

Internal friction in Fe–Al–Si alloys at elevated temperatures

2006 ◽  
Vol 14 (10-11) ◽  
pp. 1238-1244 ◽  
Author(s):  
T.S. Pavlova ◽  
I.S. Golovin ◽  
H.-R. Sinning ◽  
S.A. Golovin ◽  
C. Siemers
Keyword(s):  
Internal Friction ◽  
Elevated Temperatures

High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures

2014 ◽  
Vol 317 ◽  
pp. 811-817 ◽  
Author(s):  
A. Finzel ◽  
J.W. Gerlach ◽  
J. Lorbeer ◽  
F. Frost ◽  
B. Rauschenbach
Keyword(s):  
Gallium Nitride ◽  
Elevated Temperatures ◽  
Ion Irradiation ◽  
High Fluence

LiNbO3 composite oscillator for internal friction and modulus measurement at elevated temperatures

1996 ◽  
Vol 67 (6) ◽  
pp. 2419-2420 ◽  
Author(s):  
Masakuni Ozawa ◽  
Masahiko Inagaki ◽  
Suguru Suzuki
Keyword(s):  
Internal Friction ◽  
Elevated Temperatures ◽  
Modulus Measurement
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