Optimization of tuning and matching of broadband transducers with power switching amplifiers

2011 ◽  
Vol 130 (4) ◽  
pp. 2394-2394
Author(s):  
Corey Bachand ◽  
Boris Aronov ◽  
David A. Brown
Keyword(s):  
Power Switching ◽  
Switching Amplifiers

Study of SiC Device for Pulsed Power Switching Circuit

2019 ◽  
Vol 139 (8) ◽  
pp. 345-350
Author(s):  
Toru Tagawa ◽  
Tomohiko Yamashita ◽  
Takashi Sakugawa ◽  
Sunao Katsuki ◽  
Kenzi Hukuda ◽  
...  
Keyword(s):  
Pulsed Power ◽  
Switching Circuit ◽  
Power Switching

Thermal-aware Output Polarity Selection Based on And-Inverter Graph Manipulation

2019 ◽  
Vol 12 (1) ◽  
pp. 30-39 ◽  
Author(s):  
Apangshu Das ◽  
Sambhu Nath Pradhan
Keyword(s):  
Integrated Circuits ◽  
Power Density ◽  
Logic Synthesis ◽  
Programmable Logic Arrays ◽  
Power Switching ◽  
Nsga Ii ◽  
Multi Level ◽  
Search Approach ◽  
Efficient Power ◽  
The Impact

Background: Output polarity of the sub-function is generally considered to reduce the area and power of a circuit at the two-level realization. Along with area and power, the power-density is also one of the significant parameter which needs to be consider, because power-density directly converges to circuit temperature. More than 50% of the modern day integrated circuits are damaged due to excessive overheating. Methods: This work demonstrates the impact of efficient power density based logic synthesis (in the form of suitable polarity selection of sub-function of Programmable Logic Arrays (PLAs) for its multilevel realization) for the reduction of temperature. Two-level PLA optimization using output polarity selection is considered first and compared with other existing techniques and then And-Invert Graphs (AIG) based multi-level realization has been considered to overcome the redundant solution generated in two-level synthesis. AIG nodes and associated power dissipation can be reduced by rewriting, refactoring and balancing technique. Reduction of nodes leads to the reduction of the area but on the contrary increases power and power density of the circuit. A meta-heuristic search approach i.e., Nondominated Sorting Genetic Algorithm-II (NSGA-II) is proposed to select the suitable output polarity of PLA sub-functions for its optimal realization. Results: Best power density based solution saves up to 8.29% power density compared to ‘espresso – dopo’ based solutions. Around 9.57% saving in area and 9.67% saving in power (switching activity) are obtained with respect to ‘espresso’ based solution using NSGA-II. Conclusion: Suitable output polarity realized circuit is converted into multi-level AIG structure and synthesized to overcome the redundant solution at the two-level circuit. It is observed that with the increase in power density, the temperature of a particular circuit is also increases.

scholarly journals A New Concept for Deeper Integration of Converters and Drives in Electrical Machines: Simulation and Experimental Investigations

Open Physics ◽  
2019 ◽  
Vol 17 (1) ◽  
pp. 809-815
Author(s):  
Hossam Al Ghossini ◽  
Thu Thuy Dang ◽  
Stéphane Duchesne
Keyword(s):  
Motor Drives ◽  
Electrical Machines ◽  
Experimental Investigations ◽  
Power Switching ◽  
Switched Reluctance ◽  
High Frequencies ◽  
Reluctance Motor ◽  
Switching Structure ◽  
Very High Frequencies

AbstractThis paper introduces a new concept for integrated electrical motor drives (IEMD) with the aim of minimizing the number of inverter’s power switching components. The latter is switched reluctance motor (SRM) based. The control strategy is jointly designed, inspired by Flyback power supplies operating at very high frequencies. A simple case study on an 8/6 SRM has been carried out. The study enables to highlight most challenging problems that have to be overcome in future works: overvoltages during switching due to the flux leakage, and the efficiency of the magnetic material constituting the machine at high switching frequencies. This concept turns out to be an interesting basis for a very advanced integration of the switching structure within electrical machines.

Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

2007 ◽  
Vol 46 (4B) ◽  
pp. 2175-2179 ◽  
Author(s):  
Heng-Yuan Lee ◽  
Pang-Shiu Chen ◽  
Ching-Chiun Wang ◽  
Siddheswar Maikap ◽  
Pei-Jer Tzeng ◽  
...  
Keyword(s):  
Low Power ◽  
Hafnium Oxide ◽  
Resistive Memory ◽  
Power Switching

Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications

2014 ◽  
Vol 778-780 ◽  
pp. 967-970 ◽  
Author(s):  
Donald A. Gajewski ◽  
Sei Hyung Ryu ◽  
Mrinal Das ◽  
Brett Hull ◽  
Jonathan Young ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Large Sample Size ◽  
Next Generation ◽  
Process Technology ◽  
Power Switching ◽  
Comprehensive Reliability ◽  
Reliability Performance ◽  
Acceptance Tests ◽  
Frequency Power

We present new reliability results on the Cree, Inc., 4H-SiC, DMOSFET devices. The Cree DMOSFETs were developed to meet the demand of next-generation, high-frequency power switching applications, such as: dc-ac inversion, dc-dc conversion, and ac-dc rectification, with continually improving energy efficiency. The Cree Generation 2 DMOSFET process technology is now commercially available with 1200 V and 1700 V ratings. We have performed intrinsic reliability studies to ensure excellent wear-out performance and long field lifetime of the products. We have also performed large sample size qualification reliability acceptance tests to ensure the quality of the manufacturing and packaging processes. These comprehensive reliability studies establish new benchmarks for wide bandgap transistors and demonstrate that Crees MOSFETs meet or exceed all industrial reliability requirements. This achievement facilitates broad market adoption of this disruptive power switch technology.

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