Sound characteristic measuring device, automatic sound field correcting device, sound characteristic measuring method and automatic sound field correcting method

2007 ◽  
Vol 121 (6) ◽  
pp. 3265
Author(s):  
Hajime Yoshino
Keyword(s):  
Sound Field ◽  
Measuring Method ◽  
Measuring Device

2P1-C20 3D Sound Field Measuring Device with Automatic Height Varying Function

2006 ◽  
Vol 2006 (0) ◽  
pp. _2P1-C20_1-_2P1-C20_2
Author(s):  
Masato OOSHIMA ◽  
Takafumi NAKAMURA ◽  
Nobuo MITAKE ◽  
Hiroshi TAKEMURA ◽  
Hiroshi MIZOGUCHI ◽  
...  
Keyword(s):  
Sound Field ◽  
Measuring Device ◽  
3D Sound ◽  
Field Measuring

An Electrical Testing Method for Blind Through Silicon Vias (TSVs) for 3D IC Integration

2011 ◽  
Vol 8 (4) ◽  
pp. 140-145 ◽  
Author(s):  
Shyh-Shyuan Sheu ◽  
Zhe-Hui Lin ◽  
Jui-Feng Hung ◽  
John H. Lau ◽  
Peng-Shu Chen ◽  
...  
Keyword(s):  
Measuring Method ◽  
Specific Design ◽  
3D Ic ◽  
Measuring Device ◽  
Component Testing ◽  
Testing Method ◽  
Parasitic Parameters ◽  
Frequency Coupling ◽  
Reducing Costs ◽  
Silicon Vias

This paper proposes a 3D IC integration TSV testing apparatus, primarily using at least one set of TSV component testing devices with a specific design. Under complex technological conditions, such as varying depth-width ratios of TSVs and heterogeneous IC integration, as well as the principle of different coupling parasitic parameters between TSVs, the TSV coupling measuring device designed for specific purposes in coordination with a measuring method for high-frequency coupling TSV S-parameters, achieves the function of monitoring the SiO2 thickness completeness of TSVs. This feasible approach further allows judgment of whether subsequent processes can continue, effectively reducing costs.

scholarly journals Measuring Method of the Internal Temperature of UHV DC Voltage Measuring Device

2018 ◽  
Vol 366 ◽  
pp. 012081
Author(s):  
Tingting Xie ◽  
Zhongzhou Yang ◽  
Jianhua Feng ◽  
Wei Zheng ◽  
Shan Wang
Keyword(s):  
Measuring Method ◽  
Internal Temperature ◽  
Measuring Device ◽  
Dc Voltage

Observation of Grinding Wheel Wear Patterns by Means of a 3-Dimensional Digital Measuring Method

2008 ◽  
Vol 389-390 ◽  
pp. 108-113 ◽  
Author(s):  
Hwa Soo Lee ◽  
Takazo Yamada ◽  
Naoyuki Ishida
Keyword(s):  
Three Dimensional ◽  
Measuring Method ◽  
Grinding Wheel ◽  
Grinding Process ◽  
Digital Measuring ◽  
Grinding Wheels ◽  
Wheel Wear ◽  
Measuring Device ◽  
3 Dimensional ◽  
Grinding Wheel Wear

Surface geometries of grinding wheels vary due to the wear in grinding process. Since the wheel wear patterns are affected by the grinding process, measuring and investigating these patterns quantitatively, grinding process can be evaluated whether appropriate or not. Utilizing a three-dimensional measuring device for wheel surfaces developed so far, this study aims to evaluate wheel wear patterns quantitatively. As the results, applying developed device, it is clarified that wheel wear pattern can be classified and evaluated quantitatively.

An Electrical Testing Method for Blind Through Silicon Vias (TSVs) for 3D IC Integration

2011 ◽  
Vol 2011 (1) ◽  
pp. 000208-000214
Author(s):  
Shyh-Shyuan Sheu ◽  
Zue-Hua Lin ◽  
Jui-Feng Hung ◽  
John H. Lau ◽  
Peng-Shu Chen ◽  
...  
Keyword(s):  
Measuring Method ◽  
Specific Design ◽  
3D Ic ◽  
Measuring Device ◽  
Component Testing ◽  
Testing Method ◽  
Parasitic Parameters ◽  
Frequency Coupling ◽  
Reducing Costs ◽  
Silicon Vias

This paper proposes a 3D IC integration TSV testing apparatus, primarily using at least one set of TSV component testing devices with a specific design. Under complex technological conditions, such as varying depth-width ratios of TSVs and heterogeneous IC integration, as well as the principle of different coupling parasitic parameters between TSVs, the TSV coupling measuring device designed for specific purposes in coordination with a measuring method for high-frequency coupling TSV S-parameters, achieving the function of monitoring the SiO2 thickness of TSVs. This feasible approach further allows judgment of whether subsequent processes can continue, effectively reducing costs.

scholarly journals Antimigration Effects of the Number of Flaps on a Plastic Stent: Three-Dimensionally Printed Pancreatic Phantom and Ex Vivo Studies

2021 ◽  
Vol 11 (11) ◽  
pp. 4830
Author(s):  
Dae-Sung Ryu ◽  
Joon-Myeong Choi ◽  
Woo-Jin Kim ◽  
Jeon-Min Kang ◽  
Ki-Baek Lee ◽  
...  
Keyword(s):  
Ex Vivo ◽  
Measuring Method ◽  
Stent Migration ◽  
Porcine Pancreas ◽  
Measuring Device ◽  
Plastic Stent ◽  
The Mean ◽  
Type 3

Stent migration is a significant obstacle to successful stent placement. There has been no investigation of the effect and quantitative interpretation of flaps attached to a plastic stent (PS) on antimigration. The antimigration effects of the number of flaps on a PS in a 3D-printed pancreatic phantom (3DP) and extracted porcine pancreas (EPP) were investigated. Four PS types were used in this study: stent without flaps (type 1), stent with two flaps (type 2), stent with four horizontally made flaps (type 3), and stent with four vertically made flaps (type 4). The stents were measured and compared for antimigration force (AMF) in the 3DP and EPP using a customized measuring method and an integrated measuring device. The mean maximum AMFs (MAMFs) in types 2, 3, and 4 were significantly higher than that in type 1 (all p < 0.001). Moreover, the mean MAMFs in types 3 and 4 were significantly higher than that in type 2 (all p < 0.001). When the flaps were removed from the pancreatic duct, the AMF decreased rapidly. As the number of flaps increased, the antimigration effects significantly increased in the 3DP and EPP. However, the direction of the flaps did not affect the MAMF. The position of the flaps attached to the surface of the stent affected the AMF.

Decay of Temporary Threshold Shift in Noise

1973 ◽  
Vol 16 (2) ◽  
pp. 267-270 ◽  
Author(s):  
John H. Mills ◽  
Seija A. Talo ◽  
Gloria S. Gordon
Keyword(s):  
Sound Field ◽  
Threshold Shift ◽  
Temporary Threshold Shift ◽  
Octave Band ◽  
Band Noise ◽  
Lower Asymptote

Groups of monaural chinchillas trained in behavioral audiometry were exposed in a diffuse sound field to an octave-band noise centered at 4.0 k Hz. The growth of temporary threshold shift (TTS) at 5.7 k Hz from zero to an asymptote (TTS ∞ ) required about 24 hours, and the growth of TTS at 5.7 k Hz from an asymptote to a higher asymptote, about 12–24 hours. TTS ∞ can be described by the equation TTS ∞ = 1.6(SPL-A) where A = 47. These results are consistent with those previously reported in this journal by Carder and Miller and Mills and Talo. Whereas the decay of TTS ∞ to zero required about three days, the decay of TTS ∞ to a lower TTS ∞ required about three to seven days. The decay of TTS ∞ in noise, therefore, appears to require slightly more time than the decay of TTS ∞ in the quiet. However, for a given level of noise, the magnitude of TTS ∞ is the same regardless of whether the TTS asymptote is approached from zero, from a lower asymptote, or from a higher asymptote.

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