Digital radiology using active matrix readout of amorphous selenium: Detectors with high voltage protection

1998 ◽  
Vol 25 (4) ◽  
pp. 539-549 ◽  
Author(s):  
Wei Zhao ◽  
James Law ◽  
David Waechter ◽  
Zhongshou Huang ◽  
J. A. Rowlands
Radiographics ◽  
1997 ◽  
Vol 17 (3) ◽  
pp. 753-760 ◽  
Author(s):  
J A Rowlands ◽  
W Zhao ◽  
I M Blevis ◽  
D F Waechter ◽  
Z Huang

1996 ◽  
Author(s):  
Wei Zhao ◽  
Ira M. Blevis ◽  
Stephen Germann ◽  
John A. Rowlands ◽  
David F. Waechter ◽  
...  

1997 ◽  
Author(s):  
John A. Rowlands ◽  
Wei Zhao ◽  
Ira M. Blevis ◽  
Gendi Pang ◽  
Winston G. Ji ◽  
...  

1997 ◽  
Vol 24 (12) ◽  
pp. 1834-1843 ◽  
Author(s):  
Wei Zhao ◽  
Ira Blevis ◽  
Stephen Germann ◽  
J. A. Rowlands ◽  
David Waechter ◽  
...  

2008 ◽  
Vol 35 (10) ◽  
pp. 4324-4332 ◽  
Author(s):  
Afrin Sultana ◽  
Alla Reznik ◽  
Karim S. Karim ◽  
J. A. Rowlands

1999 ◽  
Vol 558 ◽  
Author(s):  
J.Y. Nahm ◽  
J.H. Lan ◽  
J. Kanicki

ABSTRACTA high-voltage hydrogenated amorphous silicon thin film transistor (H-V a-Si:H TFT) with thick double layer gate insulator (∼0.95 μm) has been developed for reflective active-matrix cholesteric liquid crystal displays. The double layer gate insulator consists of 0.85 and 0.10 μm thick benzocyclobutene and hydrogenated amorphous silicon nitride, respectively. This HV a-Si:H TFT operates at the gate-tosource and drain-to-source biases up to 100V without any serious leakage current degradation and device breakdown.


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