Digital radiology using active matrix readout of amorphous selenium: Radiation hardness of cadmium selenide thin film transistors

1998 ◽  
Vol 25 (4) ◽  
pp. 527-538 ◽  
Author(s):  
Wei Zhao ◽  
David Waechter ◽  
J. A. Rowlands
Keyword(s):  
Thin Film ◽  
Cadmium Selenide ◽  
Thin Film Transistors ◽  
Radiation Hardness ◽  
Amorphous Selenium ◽  
Active Matrix ◽  
Digital Radiology ◽  
Selenide Thin Film

Low-frequency noise in cadmium-selenide thin-film transistors

2000 ◽  
Vol 77 (14) ◽  
pp. 2234-2236 ◽  
Author(s):  
M. Jamal Deen ◽  
S. L. Rumyantsev ◽  
D. Landheer ◽  
D.-X. Xu
Keyword(s):  
Thin Film ◽  
Cadmium Selenide ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Selenide Thin Film

Cadmium selenide thin‐film transistors

1978 ◽  
Vol 15 (6) ◽  
pp. 1823-1835 ◽  
Author(s):  
J. C. Erskine ◽  
A. Cserhati
Keyword(s):  
Thin Film ◽  
Cadmium Selenide ◽  
Thin Film Transistors ◽  
Selenide Thin Film

Characteristics of dual-gate thin-film transistors for applications in digital radiology

1996 ◽  
Vol 74 (S1) ◽  
pp. 131-134 ◽  
Author(s):  
D. Waechter ◽  
Z. Huang ◽  
W. Zhao ◽  
I. Blevis ◽  
J. A. Rowlands
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Amorphous Selenium ◽  
Large Area ◽  
Digital Radiology ◽  
X Ray ◽  
Dual Gate ◽  
Gate Potential ◽  
Over The Top

A large-area flat-panel detector for digital radiology is being developed. The detector uses an array of dual-gate thin-film transistors (TFTs) to read out X-ray-generated charge produced in an amorphous selenium (a-Se) layer. The TFTs use CdSe as the semiconductor and use the bottom gate for row selection. The top gate can be divided into a "deliberate" gate, covering most of the channel length, and smaller "parasitic" gates that consist of (i) overlap of source or drain metal over the top-gate oxide, and (ii) gap regions in the metal that are covered only by the a-Se. In this paper we present the properties of dual-gate TFTs and examine the effect of both the deliberate and parasitic gates on the detector operation. Various options for controlling the top-gate potential are analyzed and discussed.

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