scholarly journals Characterization of a synthetic single crystal diamond Schottky diode for radiotherapy electron beam dosimetry

2013 ◽  
Vol 40 (2) ◽  
pp. 021712 ◽  
Author(s):  
C. Di Venanzio ◽  
Marco Marinelli ◽  
E. Milani ◽  
G. Prestopino ◽  
C. Verona ◽  
...  
2015 ◽  
Vol 56 (6) ◽  
pp. 912-918 ◽  
Author(s):  
Yuichi Akino ◽  
Archana Gautam ◽  
Len Coutinho ◽  
Jan Würfel ◽  
Indra J. Das

2012 ◽  
Vol 14 (5) ◽  
pp. 053011 ◽  
Author(s):  
F Picollo ◽  
D Gatto Monticone ◽  
P Olivero ◽  
B A Fairchild ◽  
S Rubanov ◽  
...  

2004 ◽  
Vol 84 (15) ◽  
pp. 2754-2756 ◽  
Author(s):  
E. Gu ◽  
H. W. Choi ◽  
C. Liu ◽  
C. Griffin ◽  
J. M. Girkin ◽  
...  

2008 ◽  
Vol 3 (12) ◽  
pp. P12002-P12002 ◽  
Author(s):  
M Mathes ◽  
M Cristinziani ◽  
H Kagan ◽  
S Smith ◽  
W Trischuk ◽  
...  

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1080
Author(s):  
Julia Heupel ◽  
Maximilian Pallmann ◽  
Jonathan Körber ◽  
Rolf Merz ◽  
Michael Kopnarski ◽  
...  

The development of quantum technologies is one of the big challenges in modern research. A crucial component for many applications is an efficient, coherent spin–photon interface, and coupling single-color centers in thin diamond membranes to a microcavity is a promising approach. To structure such micrometer thin single-crystal diamond (SCD) membranes with a good quality, it is important to minimize defects originating from polishing or etching procedures. Here, we report on the fabrication of SCD membranes, with various diameters, exhibiting a low surface roughness down to 0.4 nm on a small area scale, by etching through a diamond bulk mask with angled holes. A significant reduction in pits induced by micromasking and polishing damages was accomplished by the application of alternating Ar/Cl2 + O2 dry etching steps. By a variation of etching parameters regarding the Ar/Cl2 step, an enhanced planarization of the surface was obtained, in particular, for surfaces with a higher initial surface roughness of several nanometers. Furthermore, we present the successful bonding of an SCD membrane via van der Waals forces on a cavity mirror and perform finesse measurements which yielded values between 500 and 5000, depending on the position and hence on the membrane thickness. Our results are promising for, e.g., an efficient spin–photon interface.


1991 ◽  
Vol 05 (18) ◽  
pp. 1203-1211 ◽  
Author(s):  
C. ATTANASIO ◽  
L. MARITATO ◽  
A. NIGRO ◽  
S. PRISHEPA ◽  
R. SCAFURO

BSCCO thin films with T c (R = 0) higher than 80 K have been routinely prepared using a simple and reliable technique in which we completely electron beam evaporated weighted amounts of bulk pellets. The films were grown on MgO single crystal (100) substrates and showed, after an ex-situ annealing at high temperatures (840–880° C) for several hours, a strong preferential orientation with the c-axis perpendicular to the plane of the substrate. The films were characterized by Θ − 2Θ X-ray diffraction and EDS analysis and by paraconductivity and critical current measurements.


2011 ◽  
Vol 45 (3) ◽  
pp. 392-396 ◽  
Author(s):  
A. A. Altukhov ◽  
A. L. Vikharev ◽  
A. M. Gorbachev ◽  
M. P. Dukhnovsky ◽  
V. E. Zemlyakov ◽  
...  

2016 ◽  
Vol 70 ◽  
pp. 159-166 ◽  
Author(s):  
Noritaka Kawasegi ◽  
Seiya Kuroda ◽  
Noboru Morita ◽  
Kazuhito Nishimura ◽  
Makoto Yamaguchi ◽  
...  

2000 ◽  
Vol 657 ◽  
Author(s):  
A. V. Sumant ◽  
O. Auciello ◽  
A. R. Krauss ◽  
D. M. Gruen ◽  
D. Ersoy ◽  
...  

ABSTRACTThe mechanical, thermal, chemical, and tribological properties of diamond make it an ideal material for the fabrication of MEMS components. However, conventional CVD diamond deposition methods result in either a coarse-grained pure diamond structure that prevents high- resolution patterning, or in a fine-grained diamond film with a significant amount of intergranular non-diamond carbon. At Argonne National Laboratory, we are able to produce phase-pure ultrananocrystalline diamond (UNCD) films for the fabrication of MEMS components. UNCD is grown by microwave plasma CVD using C60-Ar or CH4-Ar plasmas, resulting in films that have 3-5 nm grain size, are 10-20 times smoother than conventionally grown diamond films, and can have mechanical properties similar to that of single crystal diamond. We used lithographic patterning, lift-off, and etching, in conjunction with the capability for growing UNCD on SiO2 to fabricate 2-D and 3-D UNCD-MEMS structures. We have performed initial characterization of mechanical properties by using nanoindentation and in-situ TEM indentor techniques. The values of Hardness (∼88 GPa) and Young's modulus (∼ 864 GPa) measured are very close to those of single crystal diamond (100 GPa and 1000 GPa respectively). The results show that UNCD is a promising material for future high performance MEMS devices.


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