The local enhancement of radiation dose from photons of MeV energies obtained by introducing materials of high atomic number into the treatment region

2009 ◽  
Vol 36 (8) ◽  
pp. 3543-3548 ◽  
Author(s):  
Ahmad Alkhatib ◽  
Yoichi Watanabe ◽  
John H. Broadhurst
Keyword(s):  
Radiation Dose ◽  
Atomic Number ◽  
Local Enhancement ◽  
High Atomic Number

Backscatter dose effects for high atomic number materials being irradiated in the presence of a magnetic field: A Monte Carlo study for the MRI linac

2016 ◽  
Vol 43 (8Part1) ◽  
pp. 4665-4673 ◽  
Author(s):  
Syed Bilal Ahmad ◽  
Arman Sarfehnia ◽  
Anthony Kim ◽  
Matt Wronski ◽  
Arjun Sahgal ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Monte Carlo ◽  
Atomic Number ◽  
Monte Carlo Study ◽  
High Atomic Number ◽  
Dose Effects

Variable-Thickness Chest Filtration: The Effect Of High Atomic Number Filter Materials

1984 ◽  
Author(s):  
Carl J. Vyborny ◽  
Heber MacMahon ◽  
Kunio Doi ◽  
Mircea Sabau
Keyword(s):  
Atomic Number ◽  
Variable Thickness ◽  
High Atomic Number ◽  
Filter Materials

Dimensionally reduced heavy atom semiconductors as candidate materials for γ-ray detection: the case of Cs2Hg6S7

2011 ◽  
Vol 1341 ◽  
Author(s):  
Ioannis Androulakis ◽  
Hao Li ◽  
Christos Malliakas ◽  
John A. Peters ◽  
Zhifu Liu ◽  
...  
Keyword(s):  
Band Gap ◽  
Atomic Number ◽  
Dimensional Reduction ◽  
Mass Density ◽  
Heavy Atom ◽  
High Mass ◽  
Semiconducting Materials ◽  
High Atomic Number ◽  
Semiconductor Compounds ◽  
Γ Ray

ABSTRACTWe address the issue of decreasing band-gap with increasing atomic number, inherent in semiconducting materials, by introducing a concept we call dimensional reduction. The concept leads to semiconductor compounds containing high atomic number elements and simultaneously exhibiting a large band gap and high mass density suggesting that dimensional reduction can be successfully employed in developing new γ-ray detecting materials. As an example we discuss the compound Cs2Hg6S7 that exhibits a band-gap of 1.65eV and mobility-lifetime products comparable to those of optimized Cd0.9Zn0.1Te.

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