Dimensionally reduced heavy atom semiconductors as candidate materials for γ-ray detection: the case of Cs2Hg6S7
Keyword(s):
Band Gap
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ABSTRACTWe address the issue of decreasing band-gap with increasing atomic number, inherent in semiconducting materials, by introducing a concept we call dimensional reduction. The concept leads to semiconductor compounds containing high atomic number elements and simultaneously exhibiting a large band gap and high mass density suggesting that dimensional reduction can be successfully employed in developing new γ-ray detecting materials. As an example we discuss the compound Cs2Hg6S7 that exhibits a band-gap of 1.65eV and mobility-lifetime products comparable to those of optimized Cd0.9Zn0.1Te.
2015 ◽
Vol 11
(A29B)
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pp. 793-794
Keyword(s):
2015 ◽
Vol 11
(S315)
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pp. 247-253
Keyword(s):
Keyword(s):