Minimization Of Heating Effects Of A Mechanically Stable Mom Point Contact Diode For High Power CO 2 Laser Detection

1988 ◽  
Author(s):  
C. Yu ◽  
C. S. Tan
Keyword(s):  
High Power ◽  
Point Contact ◽  
Laser Detection ◽  
Heating Effects ◽  
Point Contact Diode

Thermal and spectral analysis of self-heating effects in high-power LEDs

2010 ◽  
Vol 54 (4) ◽  
pp. 378-381 ◽  
Author(s):  
Nicholas M. Rada ◽  
Gregory E. Triplett
Keyword(s):  
Spectral Analysis ◽  
High Power ◽  
Self Heating ◽  
Heating Effects

Self Heating Effects of High Power SOI Vertical DMOS Transistor with Lateral Drain Contacts

2002 ◽  
Vol T101 (1) ◽  
pp. 38 ◽  
Author(s):  
Kuntjoro Pinardi ◽  
Ulrich Heinle ◽  
Stefan Bengtsson ◽  
J?rgen Olsson
Keyword(s):  
High Power ◽  
Self Heating ◽  
Heating Effects

scholarly journals Construction of a W-Ni Point Contact Diode

1981 ◽  
Vol 9 (2) ◽  
pp. 182-189
Author(s):  
Eiichi SAKUMA
Keyword(s):  
Point Contact ◽  
Point Contact Diode

scholarly journals Reliability Concerns due to Self-Heating effects in GaN HEMTs

2013 ◽  
Vol 8 (2) ◽  
pp. 78-82
Author(s):  
B. Padmanabhan ◽  
D. Vasileska ◽  
S. M. Goodnick
Keyword(s):  
High Power ◽  
High Frequency ◽  
Additional Problem ◽  
Bias Stress ◽  
Self Heating ◽  
Current Collapse ◽  
Heating Effects ◽  
Dc Bias ◽  
Gan Hemts

Current collapse phenomenon that occurs in GaN HEMTs under a moderately large DC bias stress, poses serious problems for usage of GaN technology in high-power high-frequency applications from a reliability standpoint. Additional problem in these devices operated at high biases is the appearance of self-heating effects that degrade device characteristics and, as shown in this work further amplify the problem of current collapse by changing the device electrostatics.

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