Accurate Determination Of The Spin-Orbit Splitting Of The Valence Bands Of Silicon By Means Of Fourier Transform Photothermal Ionization Spectroscopy (FT-PTIS)

1989 ◽  
Author(s):  
S. C. Shen ◽  
Zhiyi Yu ◽  
Y. X. Huang
Keyword(s):  
Fourier Transform ◽  
Accurate Determination ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Spin Orbit Splitting ◽  
Photothermal Ionization ◽  
Photothermal Ionization Spectroscopy ◽  
Valence Bands

Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters

1996 ◽  
Vol 449 ◽  
Author(s):  
N. V. Edwards ◽  
S. D. Yoo ◽  
M. D. Bremser ◽  
M. N. Horton ◽  
N. R. Perkins ◽  
...  
Keyword(s):  
Accurate Determination ◽  
Nonlinear Behavior ◽  
Biaxial Stress ◽  
Energy Separation ◽  
Energy Position ◽  
Orbit Splitting ◽  
Spin Orbit Splitting ◽  
Valence Bands ◽  
Reflectance Data

ABSTRACTWe provide the widest estimate thus far of the range of tensile and compressive stress (−3.8 to 3.5 kbar) that GaN epitaxial material can withstand before relaxation occurs, and an unambiguous determination of the spin-orbit splitting Δso = 17.0 ± 1 meV for the material. These are achieved by analyzing 10K reflectance data for the energy separation of transitions between the uppermost valence bands and the lowest conduction band of wurtzitic GaN as a function of biaxial stress for a series of GaN films grown on both Al2O3 and 6H-SiC substrates. Our data explicitly show the nonlinear behavior of the excitonic energy splittings B-A and C-A vs. the energy position of the A exciton, which stands in contrast to the linear approximations used by previous workers analyzing material grown only on Al2O3 substrates. Further, the lineshape ambiguities present in GaN reflectance spectra that hindered the accurate determination of such excitonic energies have also been resolved by analyzing these data in reciprocal space, where critical point energies are determined by phase effects to an accuracy of ±0.5 meV.

Temperature variation of energy gap values in CuGaSnSe4

1982 ◽  
Vol 60 (1) ◽  
pp. 10-15 ◽  
Author(s):  
S. Adan Lopez-Rivera ◽  
R. Gerald Goodchild ◽  
Owain H. Hughes ◽  
John C. Woolley ◽  
Brian R. Pamplin
Keyword(s):  
Temperature Variation ◽  
Energy Gap ◽  
Single Crystal Sample ◽  
Spin Orbit ◽  
Orbit Splitting ◽  
Crystal Sample ◽  
Energy Gaps ◽  
Spin Orbit Splitting ◽  
Valence Bands ◽  
D Orbitals

Measurements of reflectance as a function of temperature from 4 to 300 K have been made on a single crystal sample of CuGaSnSe4 using light polarised (a) perpendicular and (b) parallel to the c axis of the crystal. Values of the energy gaps EA, EB, and EC between the three valence bands and the conduction band have thus been determined as a function of temperature. The variation of these energy gaps with temperature has been fitted to the equation proposed by Manoogian and Leclerc, i.e., E0 − E = UTs + Vθ(coth (θ/2T) − 1). Values of spin–orbit splitting Δso and crystal field splitting Δcf have been determined and the temperature variation of these explained in terms of contributions from d orbitals to the valence band. Values of the various spin–orbit splittings and deformation potentials are discussed.

Spin–orbit splitting in the valence bands of 1T-TaS2and 1T-TaSe2

2004 ◽  
Vol 16 (18) ◽  
pp. 3271-3278 ◽  
Author(s):  
F Clerc ◽  
M Bovet ◽  
H Berger ◽  
L Despont ◽  
C Koitzsch ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Orbit Splitting ◽  
Spin Orbit Splitting ◽  
Valence Bands
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