Transient Properties Of Small-Signal Gain In A Fast Axial-Flow Type Co 2 Laser Amplifier

1987 ◽  
Author(s):  
Eiichi Tsuchida ◽  
Heihachi Sato
Keyword(s):  
Axial Flow ◽  
Small Signal Gain ◽  
Small Signal ◽  
Laser Amplifier ◽  
Signal Gain ◽  
Flow Type

Small signal gain in a pulsed CO laser amplifier operating on oxygen containing gas mixtures

2007 ◽  
Author(s):  
Andrey A. Ionin ◽  
Yurii M. Klimachev ◽  
Andrey A. Kotkov ◽  
Andrey Y. Kozlov ◽  
Leonid V. Seleznev ◽  
...  
Keyword(s):  
Gas Mixtures ◽  
Small Signal Gain ◽  
Small Signal ◽  
Laser Amplifier ◽  
Co Laser ◽  
Signal Gain

Notizen:Gain Measurements in a Nitrogen Laser Amplifier

1972 ◽  
Vol 27 (10) ◽  
pp. 1518-1519 ◽  
Author(s):  
D. Basting ◽  
B. Steyer
Keyword(s):  
Nitrogen Laser ◽  
Small Signal Gain ◽  
Small Signal ◽  
Laser Amplifier ◽  
Signal Gain ◽  
Image Amplification

An oscillator amplifier nitrogen laser arrangement has been built. A small signal gain up to 340 dB/m was measured. Furthermore, image amplification of 170 times was demonstrated.

Small signal gain time behavior on high vibrational transitions (V>15) of pulsed CO laser amplifier

2004 ◽  
Author(s):  
Andrei A. Ionin ◽  
Yurii M. Klimachev ◽  
Andrei A. Kotkov ◽  
Dmitrii V. Sinitsyn ◽  
Leonid V. Seleznev ◽  
...  
Keyword(s):  
Small Signal Gain ◽  
Time Behavior ◽  
Small Signal ◽  
Laser Amplifier ◽  
Co Laser ◽  
Signal Gain ◽  
Vibrational Transitions

Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Output Power ◽  
Heterojunction Bipolar Transistors ◽  
Power Amplifiers ◽  
Small Signal Gain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Saturated Output Power

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

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