Measurement And Control Of Wafer Temperature In A Plasma Etching Reactor

1987 ◽  
Author(s):  
Diane Vogel ◽  
Fred Wong
Keyword(s):  
Plasma Etching ◽  
Wafer Temperature ◽  
And Control ◽  
Measurement And Control

Temperature Measurements Using In Thermocouple In The Mocvd Rotating Disk Reactors

1995 ◽  
Vol 406 ◽  
Author(s):  
A. I. Gurary ◽  
R. A. Stall
Keyword(s):  
Process Parameters ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Temperature Measurements ◽  
High Yield ◽  
Wafer Temperature ◽  
Rotating Disk Reactors ◽  
And Control ◽  
Measurement And Control ◽  
Accuracy And Repeatability

AbstractRotating Disk Reactors used for Metalorganic Chemical Vapor Deposition have evolved into a leading manufacturing technology for several materials, including nitrides, compound semiconductors, metals, and oxides. One of the major issues to be resolved in bringing this technology into routine high yield manufacturing has been precise and repeatable wafer temperature measurement and control. The conventional approach to the rotating wafer temperature measurements by a stationary thermocouple located near the rotating wafer carrier suffers from low accuracy and repeatability. We have implemented a rotating thermocouple with a junction located close to the wafer for the temperature measurements in the MOCVD Rotating Disk Reactor. This approach allowed us to obtain reliable and accurate wafer temperature measurements with minimum dependence upon variable process parameters and to protect the thermocouple from degradation in the aggressive reactor environment. The temperature difference between wafer and thermocouple for the rotating and stationary thermocouple designs as a function of process parameters will be discussed.

Temperature Measurement and Control in a Rapid Thermal Processor

1985 ◽  
Vol 52 ◽  
Author(s):  
Ronald E. Sheets
Keyword(s):  
Thermal Processing ◽  
Background Radiation ◽  
Optical Pyrometer ◽  
Wafer Temperature ◽  
Loop Control ◽  
Closed Loop Control System ◽  
Loop Control System ◽  
And Control ◽  
Measurement And Control ◽  
Temperature Surface

ABSTRACTRapid Thermal Processing (RTP) of silicon or other semiconductor materials requires accurate measurement and control of temperature. In a typical RTP cycle, heating of the wafer takes place in seconds, making accurate control of the wafer temperature very critical. Non contact wafer temperature sensing is achieved using an optical pyrometer. Precise temperature control from 400° C to 1350° C is maintained with a closed loop control system consisting of an optical pyrometer and a computer. Sources of errors due to variations in emissivity as a function of wafer temperature, surface conditions and background radiation are discussed. Calibration of the system is achieved by using a thermocouple instrumented wafer.

Advances in Rtp Temperature Measurement and Control

1998 ◽  
Vol 525 ◽  
Author(s):  
Bruce Peuse ◽  
Gary Miner ◽  
Mark Yam ◽  
Curtis Elia
Keyword(s):  
Temperature Measurement ◽  
Real Time ◽  
Temperature Control ◽  
Spectral Emissivity ◽  
Measurement Tool ◽  
Wafer Temperature ◽  
Heating Source ◽  
Temperature Performance ◽  
And Control ◽  
Measurement And Control

ABSTRACTThis paper reviews work to develop and improve the temperature measurement and control technology of a commercial rapid thermal processing (RTP) system. A description of the main features of this system is given, which includes a concentric multi-zone lamp heating source, multi-point temperature measurement system and real time wafer temperature control. Innovations in RTP optical thermometry are described which resulted in improved low temperature performance, a real time spectral emissivity measurement tool which enables emissivity independent temperature measurement and an improved temperature calibration capability. The multi-input multi-output (MIMO) optimal wafer temperature control methodology is discussed. Process results demonstrating an equivalent process temperature performance of 4°C, 3-sigma, all-points-all-wafers will be presented.

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