Low Temperature Processing of TiN Epitaxial and Polycrystalline Films by Laser Physical Vapor Deposition

1990 ◽  
Author(s):  
N. Biunno ◽  
J. Narayan ◽  
A. R. Srivatsa
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Polycrystalline Films ◽  
Low Temperature Processing

Low‐temperature processing of titanium nitride films by laser physical vapor deposition

1989 ◽  
Vol 54 (16) ◽  
pp. 1519-1521 ◽  
Author(s):  
N. Biunno ◽  
J. Narayan ◽  
S. K. Hofmeister ◽  
A. R. Srivatsa ◽  
R. K. Singh
Keyword(s):  
Low Temperature ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Low Temperature Processing

Thermodynamic Analysis of Physical Vapor Deposition (PVD) Inorganic Thin Films on Low Temperature Cofired Ceramic (LTCC)

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000175-000182
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
Ambrose Wolf ◽  
Daniel Krueger
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Reliability ◽  
Interface Energy ◽  
Molecular Stability ◽  
Thin Film Adhesion ◽  
Inorganic Thin Films

Abstract Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high reliability, high density microelectronics. The functionality and robustness of rework has been increased through the incorporation of a Physical Vapor Deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for RF (Radio Frequency) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. While past work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e. thermodynamic) parameters in literature. This paper analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxides coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability over a range of temperatures. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.

Coating the inner walls of metal tubes with carbon films by physical vapor deposition at low temperature

2002 ◽  
Vol 150 (2-3) ◽  
pp. 227-231 ◽  
Author(s):  
W Ensinger ◽  
O Lensch ◽  
Th Kraus ◽  
Ch Sundermann ◽  
B Enders
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Carbon Films

Surface morphology of C60 polycrystalline films from physical vapor deposition

2001 ◽  
Vol 396 (1-2) ◽  
pp. 103-108 ◽  
Author(s):  
Reui-San Chen ◽  
Yi-Jie Lin ◽  
Yu-Ching Su ◽  
Kuan-Cheng Chiu
Keyword(s):  
Surface Morphology ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Polycrystalline Films

Low-Temperature Cu-Cu Bonding Using Silver Nanoparticles Fabricated by Physical Vapor Deposition

2017 ◽  
Vol 47 (2) ◽  
pp. 988-993 ◽  
Author(s):  
Zijian Wu ◽  
Jian Cai ◽  
Junqiang Wang ◽  
Zhiting Geng ◽  
Qian Wang
Keyword(s):  
Silver Nanoparticles ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Cu Bonding

Continuous ultra-thin MoS2 films grown by low-temperature physical vapor deposition

2014 ◽  
Vol 104 (26) ◽  
pp. 261604 ◽  
Author(s):  
C. Muratore ◽  
J. J. Hu ◽  
B. Wang ◽  
M. A. Haque ◽  
J. E. Bultman ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition
Sign in / Sign up

Export Citation Format

Share Document