Image Intensity Distribution Of Double Spaced Contact Holes

1986 ◽  
Author(s):  
Nikhil N. Kundu ◽  
Sanjay Goel ◽  
Shri N. Gupta ◽  
Bhvanesh P. Mathur
Keyword(s):  
Intensity Distribution ◽  
Image Intensity

scholarly journals Manipulation of image intensity distribution at 7.0 T: Passive RF shimming and focusing with dielectric materials

2006 ◽  
Vol 24 (1) ◽  
pp. 197-202 ◽  
Author(s):  
Qing X. Yang ◽  
Weihua Mao ◽  
Jinghua Wang ◽  
Michael B. Smith ◽  
Hao Lei ◽  
...  
Keyword(s):  
Intensity Distribution ◽  
Dielectric Materials ◽  
Image Intensity ◽  
Rf Shimming

scholarly journals Reduction in Edge-Ringing in Aberrated Images of Coherent Edge Objects by Multishaded Aperture

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Venkanna Mekala ◽  
Karuna Sagar Dasari
Keyword(s):  
Optical System ◽  
Intensity Distribution ◽  
Imaging Techniques ◽  
Straight Edge ◽  
Circular Aperture ◽  
Coherent Imaging ◽  
Image Intensity ◽  
Coherent Illumination

The images of a straight edge in coherent illumination produced by an optical system with circular aperture and apodized with multiple filters have been studied. The most common problem encountered in the coherent-imaging techniques is the edge-ringing. To minimize the edge-ringing, multishaded aperture method has been proposed. Image intensity distribution curves are drawn and edge-ringing values are evaluated. The results are compared to that of the airy case with the use of single, double and triple filtering.

Structure images of Si, Ge and Mos2 crystals and some application to radiation damage studies

1978 ◽  
Vol 36 (1) ◽  
pp. 292-293 ◽  
Author(s):  
K. Izui ◽  
T. Nishida ◽  
S. Furuno ◽  
H. Otsu ◽  
S. Kuwabara
Keyword(s):  
Radiation Damage ◽  
Exposure Time ◽  
Gaussian Distribution ◽  
Intensity Distribution ◽  
Chromatic Aberration ◽  
Magnetic Lens

Recently we have observed the structure images of silicon in the (110), (111) and (100) projection respectively, and then examined the optimum defocus and thickness ranges for the formation of such images on the basis of calculations of image contrasts using the n-slice theory. The present paper reports the effects of a chromatic aberration and a slight misorientation on the images, and also presents some applications of structure images of Si, Ge and MoS2 to the radiation damage studies.(1) Effect of a chromatic aberration and slight misorientation: There is an inevitable fluctuation in the amount of defocus due to a chromatic aberration originating from the fluctuations both in the energies of electrons and in the magnetic lens current. The actual image is a results of superposition of those fluctuated images during the exposure time. Assuming the Gaussian distribution for defocus, Δf around the optimum defocus value Δf0, the intensity distribution, I(x,y) in the image formed by this fluctuation is given by

Quanitative aspects of electron diffraction using electron holography

1995 ◽  
Vol 53 ◽  
pp. 616-617
Author(s):  
E. Völkl ◽  
L.F. Allard ◽  
B. Frost ◽  
T.A. Nolan
Keyword(s):  
Electron Beam ◽  
Electron Diffraction ◽  
Software Package ◽  
Spatial Coherence ◽  
Electron Holography ◽  
Image Intensity ◽  
Interference Fringes ◽  
Complex Image ◽  
The Difference ◽  
Recorded Image

Off-axis electron holography has the well known ability to preserve the complex image wave within the final, recorded image. This final image described by I(x,y) = I(r) contains contributions from the image intensity of the elastically scattered electrons IeI (r) = |A(r) exp (iΦ(r)) |, the contributions from the inelastically scattered electrons IineI (r), and the complex image wave Ψ = A(r) exp(iΦ(r)) as:(1) I(r) = IeI (r) + Iinel (r) + μ A(r) cos(2π Δk r + Φ(r))where the constant μ describes the contrast of the interference fringes which are related to the spatial coherence of the electron beam, and Φk is the resulting vector of the difference of the wavefront vectors of the two overlaping beams. Using a software package like HoloWorks, the complex image wave Ψ can be extracted.

scholarly journals Design of a Secondary Freeform Lens of UV LED Mosquito-Trapping Lamp for Enhancing Trapping Efficiency

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 335 ◽  
Author(s):  
Wei-Hsiung Tseng ◽  
Diana Juan ◽  
Wei-Cheng Hsiao ◽  
Cheng-Han Chan ◽  
Hsin-Yi Ma ◽  
...  
Keyword(s):  
Light Intensity ◽  
Intensity Distribution ◽  
Light Emitting Diode ◽  
Trapping Efficiency ◽  
Axially Symmetric ◽  
Light Intensity Distribution ◽  
Light Emitting ◽  
Led Light ◽  
Uv Led ◽  
Freeform Lens

In this study, our proposed ultraviolet light-emitting diode (UV LED) mosquito-trapping lamp is designed to control diseases brought by insects such as mosquitoes. In order to enable the device to efficiently catch mosquitoes in a wider area, a secondary freeform lens (SFL) is designed for UV LED. The lens is mounted on a 3 W UV LED light bar as a mosquito-trapping lamp of the new UV LED light bar module to achieve axially symmetric light intensity distribution. The special SFL is used to enhance the trapping capabilities of the mosquito-trapping lamp. The results show that when the secondary freeform surface lens is applied to the experimental outdoor UV LED mosquito-trapping lamp, the trapping range can be expanded to 100π·m2 and the captured mosquitoes increased by about 300%.

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