GaAs Integrated Circuits And Charge-Coupled Devices (CCDs) For High-Speed Signal Processing

1979 ◽  
Author(s):  
Richard C. Eden ◽  
Ira Deyhimy
Keyword(s):  
Signal Processing ◽  
Integrated Circuits ◽  
High Speed ◽  
Charge Coupled Devices

scholarly journals Design of High-Speed Low Power Computational Blocks for DSP Processors

2021 ◽  
Vol 11 (2) ◽  
pp. 1419-1429
Author(s):  
Alivelu Manga N.
Keyword(s):  
Signal Processing ◽  
Integrated Circuits ◽  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
Large Scale ◽  
Power Optimization ◽  
Digital Signal ◽  
Oxide Semiconductor ◽  
Performance Criteria

In today’s deep submicron VLSI (Very Large-Scale Integration) Integrated Circuits, power optimization and speed play a very important role. This importance for low power has initiated the designs where power dissipation is equally important as performance and area. Power reduction and power management are the key challenges in the design of circuits down to 100nm. For power optimization, there are several techniques and extension designs are applied in the literature. In real time Digital Signal Processing applications, multiplication and accumulation are significant operations. The primary performance criteria for these signal processing operations are speed and power consumption. To lower the power consumption, there are techniques like Multi threshold (Multi-Vth), Dula-Vth etc. Among those, a technique known as GDI (Gate diffusion Input) is used which allows reduction in power, delay and area of digital circuits, while maintaining low complexity of logic design. In this paper, various signal processing blocks like parallel-prefix adder, Braun multiplier and a Barrel shifter are designed using GDI (Gate diffusion Input) technique and compared with conventional CMOS (Complementary Metal Oxide Semiconductor) based designs in terms of delay and speed. The designs are simulated using Cadence Virtuoso 45nm technology. The Simulation results shows that GDI based designs consume less power and delay also reduced compared to CMOS based designs.

Optoelectronic Integrated Circuits For High Speed Signal Processing

1986 ◽  
Vol 25 (10) ◽  
Author(s):  
M. K. Kilcoyne ◽  
S. Beccue ◽  
K. D. Pedrotti ◽  
R. Asatourian ◽  
R. Anderson
Keyword(s):  
Signal Processing ◽  
Integrated Circuits ◽  
High Speed ◽  
Optoelectronic Integrated Circuits

High-speed signal processing architectures using charge-coupled devices

1991 ◽  
Author(s):  
Jayabharat Boddu ◽  
Satish S. Udpa ◽  
Lalita Udpa ◽  
Shiu C. Chan
Keyword(s):  
Signal Processing ◽  
High Speed ◽  
Charge Coupled Devices ◽  
Processing Architectures

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

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