Use Of Thinned Backside Illuminated CCD From The Extreme Ultraviolet To The Soft Ultraviolet.

AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range

10.1117/12.853782 ◽

2010 ◽

Cited By ~ 2

Author(s):

P. E. Malinowski ◽

J.-Y. Duboz ◽

J. John ◽

C. Sturdevant ◽

J. Das ◽

...

Keyword(s):

Extreme Ultraviolet ◽

Backside Illuminated

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Characterization of Backside-Illuminated CMOS APS Prototypes for the Extreme Ultraviolet Imager On-Board Solar Orbiter

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2255103 ◽

2013 ◽

Vol 60 (5) ◽

pp. 1701-1708 ◽

Cited By ~ 8

Author(s):

Ali BenMoussa ◽

Boris Giordanengo ◽

Samuel Gissot ◽

Guy Meynants ◽

Xinyang Wang ◽

...

Keyword(s):

Extreme Ultraviolet ◽

Backside Illuminated

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Irradiation Damage Tests on Backside-Illuminated CMOS APS Prototypes for the Extreme Ultraviolet Imager On-Board Solar Orbiter

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2013.2279550 ◽

2013 ◽

Vol 60 (5) ◽

pp. 3907-3914 ◽

Cited By ~ 7

Author(s):

A. BenMoussa ◽

S. Gissot ◽

B. Giordanengo ◽

G. Meynants ◽

X. Wang ◽

...

Keyword(s):

Extreme Ultraviolet ◽

Irradiation Damage ◽

Backside Illuminated

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Backside illuminated CMOS image sensors for extreme ultraviolet applications

IEEE SENSORS 2014 Proceedings ◽

10.1109/icsens.2014.6985339 ◽

2014 ◽

Cited By ~ 1

Author(s):

Padmakumar R. Rao ◽

Christian Laubis ◽

Stoyan Nihtianov

Keyword(s):

Extreme Ultraviolet ◽

Image Sensors ◽

Cmos Image Sensors ◽

Backside Illuminated

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Plasma-based sources of extreme ultraviolet radiation for lithography and mask inspection

Uspekhi Fizicheskih Nauk ◽

10.3367/ufnr.2018.06.038447 ◽

2018 ◽

Vol 189 (03) ◽

pp. 323-334 ◽

Cited By ~ 1

Author(s):

D.B. Abramenko ◽

P.S. Antsiferov ◽

D.I. Astakhov ◽

Aleksandr Yu. Vinokhodov ◽

Il'ya Yu. Vichev ◽

...

Keyword(s):

Ultraviolet Radiation ◽

Extreme Ultraviolet ◽

Mask Inspection ◽

Extreme Ultraviolet Radiation

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OBSERVATION OF TRANSIENT HIGH-VALENT STATES IN THE WATER OXIDATION CATALYST CoIII4O4 CUBANE VIA EXTREME ULTRAVIOLET SPECTROSCOPY

Proceedings of the 74th International Symposium on Molecular Spectroscopy ◽

10.15278/isms.2019.we04 ◽

2019 ◽

Author(s):

Yusef Shari'ati ◽

Josh Vura-Weis

Keyword(s):

Water Oxidation ◽

Extreme Ultraviolet ◽

Oxidation Catalyst ◽

Ultraviolet Spectroscopy ◽

High Valent

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Extreme Ultraviolet Technology and the Applications. Resist Process under 0.1.MU.m.

Journal of the Japan Society for Precision Engineering ◽

10.2493/jjspe.64.1004 ◽

1998 ◽

Vol 64 (7) ◽

pp. 1004-1007

Author(s):

Taro OGAINA

Keyword(s):

Extreme Ultraviolet

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Correlation of Electronic and Thermal Properties of Short Channel nMOSFETS

ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1999p0465 ◽

1999 ◽

Author(s):

M. Palaniappan ◽

V. Ng ◽

R. Heiderhoff ◽

J.C.H. Phang ◽

G.B.M. Fiege ◽

...

Keyword(s):

Thermal Properties ◽

Temperature Distribution ◽

Heat Generation ◽

Hot Spots ◽

Light Emission ◽

Photon Emission ◽

Thermal Image ◽

Short Channel ◽

Physical Phenomena ◽

Backside Illuminated

Abstract Light emission and heat generation of Si devices have become important in understanding physical phenomena in device degradation and breakdown mechanisms. This paper correlates the photon emission with the temperature distribution of a short channel nMOSFET. Investigations have been carried out to localize and characterize the hot spots using a spectroscopic photon emission microscope and a scanning thermal microscope. Frontside investigations have been carried out and are compared and discussed with backside investigations. A method has been developed to register the backside thermal image with the backside illuminated image.

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