Low-Cost DH And Quantum Well Laser Array Development

Twelve-channel strained-layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array for WDM applications by selective-area MOCVD

IEEE Photonics Technology Letters ◽

10.1109/68.311454 ◽

1994 ◽

Vol 6 (7) ◽

pp. 786-788 ◽

Cited By ~ 19

Author(s):

T.M. Cockerill ◽

R.M. Lammert ◽

D.V. Forbes ◽

M.L. Osowski ◽

J.J. Coleman

Keyword(s):

Quantum Well ◽

Laser Array ◽

Strained Layer ◽

Quantum Well Laser ◽

Selective Area ◽

Buried Heterostructure

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High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation

Applied Physics Letters ◽

10.1063/1.99349 ◽

1988 ◽

Vol 52 (9) ◽

pp. 691-693 ◽

Cited By ~ 23

Author(s):

G. S. Jackson ◽

D. C. Hall ◽

L. J. Guido ◽

W. E. Plano ◽

N. Pan ◽

...

Keyword(s):

Quantum Well ◽

High Power ◽

Power Gain ◽

Laser Array ◽

Quantum Well Laser

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High-temperature, low threshold current, and uniform operation 1×12 monolithic AlGaInAs/InP strain-compensated multiple quantum well laser array in 1.5 μm

IEEE Transactions on Electron Devices ◽

10.1109/16.777148 ◽

1999 ◽

Vol 46 (8) ◽

pp. 1614-1618 ◽

Cited By ~ 1

Author(s):

Chia-Chien Lin ◽

Meng-Chyi Wu ◽

Hung-Ping Shiao ◽

Kuo-Shung Liu

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Threshold Current ◽

Multiple Quantum ◽

Laser Array ◽

Quantum Well Laser ◽

Low Threshold ◽

Multiple Quantum Well Laser

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Mode locking of individual array modes of a gain-guided single-quantum-well laser array with an external mirror

IEEE Journal of Quantum Electronics ◽

10.1109/3.572152 ◽

1997 ◽

Vol 33 (5) ◽

pp. 784-790 ◽

Cited By ~ 1

Author(s):

Xuefei Tang ◽

J.P. van der Ziel ◽

A.K. Chin

Keyword(s):

Quantum Well ◽

Mode Locking ◽

Single Quantum ◽

Laser Array ◽

Single Quantum Well ◽

Quantum Well Laser

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Integrated external cavity quantum well laser array using single epitaxial growth on a patterned substrate

Applied Physics Letters ◽

10.1063/1.102779 ◽

1990 ◽

Vol 56 (5) ◽

pp. 429-431 ◽

Cited By ~ 13

Author(s):

C. J. Chang‐Hasnain ◽

E. Kapon ◽

J. P. Harbison ◽

L. T. Florez

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

External Cavity ◽

Laser Array ◽

Patterned Substrate ◽

Quantum Well Laser

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980-nm high-power strained quantum well laser array fabricated by MBE

10.1117/12.575258 ◽

2005 ◽

Author(s):

Xin Gao ◽

Baoxue Bo ◽

Ling Wang ◽

Yi Qu

Keyword(s):

Quantum Well ◽

High Power ◽

Laser Array ◽

Quantum Well Laser ◽

Strained Quantum Well

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REDUCTION OF THE FIELD SPECTRAL LINEWIDTH IN A QUANTUM-BOX SEMICONDUCTOR LASER AND ITS EXPERIMENTAL DEMONSTRATION USING A QUANTUM WELL LASER IN A HIGH MAGNETIC FIELD

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1987558 ◽

1987 ◽

Vol 48 (C5) ◽

pp. C5-271-C5-274

Author(s):

Y. ARAKAWA ◽

K. VAHALA ◽

A. YARIV

Keyword(s):

Magnetic Field ◽

Quantum Well ◽

Semiconductor Laser ◽

High Magnetic Field ◽

Experimental Demonstration ◽

Quantum Well Laser ◽

Spectral Linewidth

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(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

Electronics Letters ◽

10.1049/el:19930064 ◽

1993 ◽

Vol 29 (1) ◽

pp. 98-99 ◽

Cited By ~ 2

Author(s):

H. Kurakake ◽

T. Uchida ◽

H. Soda ◽

S. Yamazaki

Keyword(s):

Quantum Well ◽

Gaas Substrate ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Laser

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Characteristics of a Dilute Nitride InGaAsN Double Quantum Well Laser at 1047 nm

2020 IEEE 26th International Symposium for Design and Technology in Electronic Packaging (SIITME) ◽

10.1109/siitme50350.2020.9292223 ◽

2020 ◽

Author(s):

Andrei Dragulinescu ◽

Mihail Dumitrescu

Keyword(s):

Quantum Well ◽

Double Quantum ◽

Dilute Nitride ◽

Quantum Well Laser ◽

Double Quantum Well

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Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.31.95 ◽

2007 ◽

Vol 31 ◽

pp. 95-97

Author(s):

B. Dong ◽

W.J. Fan ◽

Y.X. Dang

Keyword(s):

Band Structure ◽

Quantum Well ◽

Optical Gain ◽

Band Structures ◽

Quantum Well Laser ◽

Suitable Combination ◽

Gain Spectra ◽

Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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