980-nm high-power strained quantum well laser array fabricated by MBE

2005 ◽  
Author(s):  
Xin Gao ◽  
Baoxue Bo ◽  
Ling Wang ◽  
Yi Qu
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Array ◽  
Quantum Well Laser ◽  
Strained Quantum Well

High-power InGaAs/GaAsP strained quantum well vertical-cavity surface-emitting laser array

2012 ◽  
Vol 20 (10) ◽  
pp. 2147-2153 ◽  
Author(s):  
刘迪 LIU Di ◽  
宁永强 NING Yong-qiang ◽  
张金龙 ZHANG Jin-long ◽  
张星 ZHANG Xing ◽  
王立军 WANG Li-jun
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Cavity Surface ◽  
Laser Array ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Strained Quantum Well ◽  
Vertical Cavity

High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation

1988 ◽  
Vol 52 (9) ◽  
pp. 691-693 ◽  
Author(s):  
G. S. Jackson ◽  
D. C. Hall ◽  
L. J. Guido ◽  
W. E. Plano ◽  
N. Pan ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Power Gain ◽  
Laser Array ◽  
Quantum Well Laser

High-power 980-nm AlGaAs/InGaAs strained quantum-well laser grown by OMVPE

1991 ◽  
Vol 3 (5) ◽  
pp. 406-408 ◽  
Author(s):  
Y.K. Chen ◽  
M.C. Wu ◽  
W.S. Hobson ◽  
S.J. Pearton ◽  
A.M. Sergent ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Laser ◽  
Strained Quantum Well

High-power highly reliable 1.02-1.06-/spl mu/m InGaAs strained-quantum-well laser diodes

2003 ◽  
Vol 39 (12) ◽  
pp. 1515-1520 ◽  
Author(s):  
M. Yuda ◽  
T. Sasaki ◽  
J. Temmyo ◽  
M. Sugo ◽  
C. Amano
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Strained Quantum Well

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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