Growth Mode And Initial Stage Schottky Barrier Formation At The In/GaAs Interface: A Photoemission Study

1988 ◽  
Author(s):  
Renyu Cao ◽  
Ken Miyano ◽  
K.Ken. Chin ◽  
Ingolf Lindau ◽  
William E. Spicer
Keyword(s):  
Schottky Barrier ◽  
Growth Mode ◽  
Barrier Formation ◽  
Initial Stage ◽  
Photoemission Study

Initial stage of Schottky barrier formation of ferromagnetic MnSb(0001) films on GaAs(111)B

1998 ◽  
Vol 130-132 ◽  
pp. 892-898 ◽  
Author(s):  
M Oshima ◽  
M Shuzo ◽  
K Ono ◽  
H Fujioka ◽  
Y Watanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation ◽  
Initial Stage

Bismuth on GaAs(110): Characterisation of growth mode and Schottky barrier formation at low and room temperature

1990 ◽  
Vol 41-42 ◽  
pp. 169-173 ◽  
Author(s):  
N. Esser ◽  
M. Hünermann ◽  
U. Resch ◽  
D. Spaltmann ◽  
J. Geurts ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Growth Mode ◽  
Barrier Formation

Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation

1978 ◽  
Vol 18 (10) ◽  
pp. 5545-5559 ◽  
Author(s):  
P. W. Chye ◽  
I. Lindau ◽  
P. Pianetta ◽  
C. M. Garner ◽  
C. Y. Su ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Barrier Formation ◽  
Photoemission Study

Chemical Reaction at the Ni/Inp (110) and Ni/GaAs (110) Interfaces

1983 ◽  
Vol 25 ◽  
Author(s):  
T. Kendelewicz ◽  
W. G. Petro ◽  
M. D. Williams ◽  
S. H. Pan ◽  
I. Lindau ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Valence Band ◽  
Chemical Reaction ◽  
Excitation Source ◽  
Nickel Phosphide ◽  
Auger Transition ◽  
Sequential Deposition ◽  
Barrier Formation ◽  
Initial Stage

ABSTRACTThe chemical reaction at the Ni/InP (110) and Ni/GaAs (110) interfaces produced by sequential deposition of thin Ni overlayers onto cleaved semiconductor surfaces has been investigated with valence band (VB) and core level photoemission and Auger spectroscopies using synchrotron radiation as the excitation source. By monitoring changes in the VB, P 2p, In 4d, Ga 3d, As 3d, and Ni 3p photoemission spectra and the lineshape of the P LVV Auger transition during the initial stage of Schottky barrier formation, we found that for both interfaces the first few Å of Ni react strongly with the surface resulting in the formation of a nickel phosphide or nickel arsenide. At the same time, segregation of metallic In or Ga is observed.

Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces

1991 ◽  
Vol 58 (20) ◽  
pp. 2243-2245 ◽  
Author(s):  
Masao Yamada ◽  
Anita K. Wahi ◽  
Paul L. Meissner ◽  
Alberto Herrera‐Gomez ◽  
Tom Kendelewicz ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation
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