Low-frequency noise and microplasma measurements as a faster tool to investigate the quality of monocrystalline-silicon solar cells

2012 ◽  
Author(s):  
Z. Chobola ◽  
M. Lunák ◽  
V. Juranková ◽  
J. Vanek ◽  
R. Barinka
Keyword(s):  
Solar Cells ◽  
Low Frequency ◽  
Monocrystalline Silicon ◽  
Silicon Solar Cells ◽  
Frequency Noise ◽  
Low Frequency Noise

Estimating the Quality of Thermionic Cathodes for Microwave Vacuum Tubes Using the Low-Frequency Noise Parameters

Vestnik MEI ◽  
2018 ◽  
Vol 5 (5) ◽  
pp. 120-127
Author(s):  
Mikhail D. Vorobyev ◽  
◽  
Dmitriy N. Yudaev ◽  
Andrey Yu. Zorin ◽  
◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Parameters ◽  
Thermionic Cathodes ◽  
Vacuum Tubes

scholarly journals A Review of the Potential Impacts of Wind Turbine Noise in the Australian Context

2020 ◽  
Vol 48 (2) ◽  
pp. 181-197
Author(s):  
John Laurence Davy ◽  
Kym Burgemeister ◽  
David Hillman ◽  
Simon Carlile
Keyword(s):  
Wind Turbine ◽  
Wind Turbines ◽  
Management Strategies ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Sleep Health ◽  
Wind Turbine Noise ◽  
Objective Basis

Abstract This manuscript describes a range of technical deliberations undertaken by the authors during their work as members of the Australian Government’s Independent Scientific Committee on Wind Turbines. Central to these deliberations was the requirement upon the committee to improve understanding and monitoring of the potential impacts of sound from wind turbines (including low frequency and infrasound) on health and the environment. The paper examines existing wind turbine sound limits, possible perceptual and physiological effects of wind turbine noise, aspects of the effects of wind turbine sound on sleep health and quality of life, low-frequency noise limits, the concept of annoyance including alternative causes of it and the potential for it to be affected by low-frequency noise, the influence of amplitude modulation and tonality, sound measurement and analysis and management strategies. In so doing it provides an objective basis for harmonisation across Australia of provisions for siting and monitoring of wind turbines, which currently vary from state to state, contributing to contention and potential inequities between Australians, depending on their place of residence.

scholarly journals Correlated In Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells Using Fullerene and Non-Fullerene Acceptors

2017 ◽  
Vol 27 (48) ◽  
pp. 1703805 ◽  
Author(s):  
Kyle A. Luck ◽  
Vinod K. Sangwan ◽  
Patrick E. Hartnett ◽  
Heather N. Arnold ◽  
Michael R. Wasielewski ◽  
...  
Keyword(s):  
Solar Cells ◽  
Impedance Spectroscopy ◽  
Organic Solar Cells ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Recombination Dynamics

Characterization of polymer:fullerene solar cells by low-frequency noise spectroscopy

2013 ◽  
Vol 102 (22) ◽  
pp. 223902 ◽  
Author(s):  
G. Landi ◽  
C. Barone ◽  
A. De Sio ◽  
S. Pagano ◽  
H. C. Neitzert
Keyword(s):  
Solar Cells ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectroscopy

Low frequency noise analysis as a diagnostic tool to assess the quality of 0.25μm Ti-silicided poly lines

1998 ◽  
Vol 38 (6-8) ◽  
pp. 925-929 ◽  
Author(s):  
E.P. Vandamme ◽  
I. De Wolf ◽  
A. Lauwers ◽  
L.K.J. Vandamme
Keyword(s):  
Diagnostic Tool ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

scholarly journals Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates

2000 ◽  
Vol 5 (S1) ◽  
pp. 612-618
Author(s):  
N. Pala ◽  
R. Gaska ◽  
M. Shur ◽  
J. W Yang ◽  
M. Asif Khan
Keyword(s):  
High Power ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
High Power Microwave ◽  
Heterostructure Field Effect Transistors ◽  
Power Microwave

The low-frequency noise in GaN-based Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors (MOS-HFETs) and HFETs on sapphire and n-SiC substrates were studied. Hooge parameter at zero gate bias was calculated about 8 × 10−4 for both types of the devices. The AlGaN/GaN MOS-HFETs exhibited extremely low gate leakage current and much lower noise at both positive and negative gate biases. These features demonstrate the high quality of the SiO2/AlGaN heterointerface and feasibility of this technology for high-power microwave transmitter and high-power, high-temperature switches.

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