Ion Argon Laser With Metall/Ceramic Discharge Tube

1987 ◽  
Author(s):  
Jerzy Kesik ◽  
Antoni Siejca
Keyword(s):  
Discharge Tube ◽  
Argon Laser

A new design of an ion argon laser discharge tube

2003 ◽  
Author(s):  
Wojciech Kaminski ◽  
Jerzy Kesik ◽  
Wieslaw L. Wolinski
Keyword(s):  
Discharge Tube ◽  
Argon Laser ◽  
Laser Discharge

Ionized argon laser with a gas-discharge tube of relatively large diameter

1973 ◽  
Vol 18 (5) ◽  
pp. 579-582
Author(s):  
N. A. Razmadze ◽  
Z. D. Chkuaseli ◽  
I. Y. Butov
Keyword(s):  
Discharge Tube ◽  
Large Diameter ◽  
Argon Laser ◽  
Gas Discharge

Chronic Laser Exposure Effects on Rabbit Retina

1972 ◽  
Vol 30 ◽  
pp. 54-55
Author(s):  
Burton B. Silver ◽  
Theodore Lawwill
Keyword(s):  
Laser Irradiation ◽  
Laser Light ◽  
Broad Band ◽  
Argon Laser ◽  
Atropine Sulfate ◽  
Ultrastructural Changes ◽  
Laser Exposure ◽  
Rabbit Retina ◽  
Histological Changes ◽  
Threshold Doses

Dutch-belted 1 to 2.5 kg anesthetized rabbits were exposed to either xenon or argon laser light administered in a broad band, designed to cover large areas of the retina. For laser exposure, the pupil was dilated with atropine sulfate 1% and pheny lephrine 10%. All of the laser generated power was within a band centered at 5145.0 Anstroms. Established threshold for 4 hour exposures to laser irradiation are in the order of 25-35 microwatts/cm2. Animals examined for ultrastructural changes received 4 hour threshold doses. These animals exhibited ERG, opthalmascopic, and histological changes consistent with threshold damage.One month following exposure the rabbits were killed with pentobarbitol. The eyes were immediately enucleated and dissected while bathed in 3% phosphate buffered gluteraldehyde.

Cristal-growth dynamics of n-doped gaAs

1992 ◽  
Vol 50 (2) ◽  
pp. 1544-1545
Author(s):  
Pham V. Huong ◽  
Stéphanie Bouchet ◽  
Jean-Claude Launay
Keyword(s):  
Crystal Growth ◽  
Spatial Resolution ◽  
Epitaxial Layer ◽  
Outer Surface ◽  
Gaas Substrate ◽  
Structural Modification ◽  
Growth Dynamics ◽  
Argon Laser ◽  
High Anisotropy ◽  
Crystal Gaas

Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.

Effect of apraclonidine hydrochloride on acute introacular pressure rise after argon laser iridotomy

1991 ◽  
Vol 5 (1) ◽  
pp. 37 ◽  
Author(s):  
Chul Hong ◽  
Ki Yung Song ◽  
Woo Hyung Park ◽  
Young Ho Sohn
Keyword(s):  
Pressure Rise ◽  
Argon Laser ◽  
Laser Iridotomy
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