Ion argon laser with metal-ceramic discharge tube: construction, technology, and gas-pumping effect

1991 ◽  
Author(s):  
Jerzy Kesik ◽  
Antoni Siejca ◽  
Maciej Sokolowski
1987 ◽  
Author(s):  
Jerzy Kesik ◽  
Antoni Siejca
Keyword(s):  

2003 ◽  
Author(s):  
Wojciech Kaminski ◽  
Jerzy Kesik ◽  
Wieslaw L. Wolinski

1973 ◽  
Vol 18 (5) ◽  
pp. 579-582
Author(s):  
N. A. Razmadze ◽  
Z. D. Chkuaseli ◽  
I. Y. Butov

Author(s):  
Burton B. Silver ◽  
Theodore Lawwill

Dutch-belted 1 to 2.5 kg anesthetized rabbits were exposed to either xenon or argon laser light administered in a broad band, designed to cover large areas of the retina. For laser exposure, the pupil was dilated with atropine sulfate 1% and pheny lephrine 10%. All of the laser generated power was within a band centered at 5145.0 Anstroms. Established threshold for 4 hour exposures to laser irradiation are in the order of 25-35 microwatts/cm2. Animals examined for ultrastructural changes received 4 hour threshold doses. These animals exhibited ERG, opthalmascopic, and histological changes consistent with threshold damage.One month following exposure the rabbits were killed with pentobarbitol. The eyes were immediately enucleated and dissected while bathed in 3% phosphate buffered gluteraldehyde.


Author(s):  
Pham V. Huong ◽  
Stéphanie Bouchet ◽  
Jean-Claude Launay

Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.


Author(s):  
N. Merk ◽  
A. P. Tomsia ◽  
G. Thomas

A recent development of new ceramic materials for structural applications involves the joining of ceramic compounds to metals. Due to the wetting problem, an interlayer material (brazing alloy) is generally used to achieve the bonding. The nature of the interfaces between such dissimilar materials is the subject of intensive studies and is of utmost importance to obtain a controlled microstructure at the discontinuities to satisfy the demanding properties for engineering applications . The brazing alloy is generally ductile and hence, does not readily fracture. It must also wett the ceramic with similar thermal expansion coefficient to avoid large stresses at joints. In the present work we study mullite-molybdenum composites using a brazing alloy for the weldment.A scanning electron micrograph from the cross section of the joining sequence studied here is presented in Fig. 1.


1997 ◽  
Vol 24 (10) ◽  
pp. 713-717 ◽  
Author(s):  
R. NAPANKANGAS ◽  
M.A.M. SALONEN ◽  
A.M. RAUSTIA

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