Design Philosophy Of Modular Systems Based On High Performance Infra-Red Focal Plane Arrays

1987 ◽  
Author(s):  
I D. Blenkinsop ◽  
R A. Ballingall ◽  
A J. Myatt ◽  
D A. Spragg
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Modular Systems ◽  
Design Philosophy ◽  
Infra Red

Advanced III/V quantum-structure devices for high performance infrared focal plane arrays

2009 ◽  
Author(s):  
Robert Rehm ◽  
Martin Walther ◽  
Johannes Schmitz ◽  
Frank Rutz ◽  
Joachim Fleissner ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Quantum Structure ◽  
Infrared Focal Plane Arrays

ROIC glow reduction in very low flux short wave infra-red focal plane arrays for astronomy

2020 ◽  
Author(s):  
Titouan Le Goff ◽  
Nicolas Baier ◽  
Olivier Gravrand ◽  
Jean-Alain Nicolas ◽  
Thibault Pichon ◽  
...  
Keyword(s):  
Focal Plane ◽  
Short Wave ◽  
Focal Plane Arrays ◽  
Infra Red

The development of InGaAs short wavelength infrared focal plane arrays with high performance

2017 ◽  
Vol 80 ◽  
pp. 112-119 ◽  
Author(s):  
Xue Li ◽  
Haimei Gong ◽  
Jiaxiong Fang ◽  
Xiumei shao ◽  
Hengjing Tang ◽  
...  
Keyword(s):  
Focal Plane ◽  
Short Wavelength ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Infrared Focal Plane Arrays

Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si Materials for Infrared Focal Plane Arrays

1990 ◽  
Vol 216 ◽  
Author(s):  
S.M. Johnson ◽  
J.B. James ◽  
W.L. Ahlgren ◽  
W.J. Hamilton ◽  
M. Ray ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
General Characteristic ◽  
Focal Plane Arrays ◽  
Misfit Dislocations ◽  
Cutoff Wavelength ◽  
X Ray Diffraction ◽  
Dislocation Interaction ◽  
X Ray ◽  
Si Substrates

ABSTRACTThe structural properties of LPE-grown HgCdTe on heteroepitaxial MOCVD-grown CdZnTe/GaAs/Si substrates were evaluated using high-resolution x-ray diffraction techniques and TEM. Large tilts {up to 4°} between CdZnTe layers and GaAs/Si substrates are a general characteristic of this heteroepitaxial system and are are attributed to the interaction of closely spaced misfit dislocations that arrange to form a tilt boundary. Either {112}CdTe or {552}CdTe can be grown on {112}GaAs/Si; the {552} was shown to result from a first-order twinning operation of {112}. Lamnella {111} microtwins in {111}CdZnTe/{100}GaAs/Si substrates, measured by x-ray techniques, are not readily propagated into the LPE-grown HgCdTe layer. The x-ray FWHM of the LPE HgCdTe is typically at least a factor of two lower than that of the Si-based substrate from annealing and due to the increased thickness of the layer; both mechanisms promote dislocation interaction and annihilation. High performance MWIR and LWIR HgCdTe 128×128 hybrid focal plane arrays were fabricated on these Si-based substrates. An array average of ROAj = 17.8 ohmcm2 for a cutoff wavelength of 10.8 μm at 78K was demonstrated.

LWIR high performance focal plane arrays Based on type-II strained layer superlattice (SLS) materials

2010 ◽  
Author(s):  
A. Hood ◽  
A. J. Evans ◽  
A. Ikhlassi ◽  
G. Sullivan ◽  
E. Piquette ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattice

High Performance Solar-Blind Ultraviolet \(320 \times 256\) Focal Plane Arrays Based on AlxGa1-xN

2014 ◽  
Vol 50 (8) ◽  
pp. 593-597 ◽  
Author(s):  
Erdem Cicek ◽  
Ryan McClintock ◽  
Abbas Haddadi ◽  
William A. Gaviria Rojas ◽  
Manijeh Razeghi
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Solar Blind
Sign in / Sign up

Export Citation Format

Share Document