Temperature Dependent Optical Studies Of GaAs/AlGaAs Single Quantum Wells

1987 ◽  
Author(s):  
Y. J. Chen ◽  
Emil S. Koteles ◽  
Johnson Lee ◽  
J. Y. Chi ◽  
B. S. Elman
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Temperature Dependent ◽  
Optical Studies

Temperature‐dependent exciton behavior in quaternary GaInAsSb/AlGaAsSb strained single quantum wells

1996 ◽  
Vol 79 (4) ◽  
pp. 2139-2141 ◽  
Author(s):  
W. Z. Shen ◽  
Y. Chang ◽  
S. C. Shen ◽  
W. G. Tang ◽  
Y. Zhao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Temperature Dependent

Optical studies of ZnSe-ZnSGaAs(100) single quantum wells grown by photo-assisted vapor phase epitaxy

1995 ◽  
Vol 96 (10) ◽  
pp. 793-798 ◽  
Author(s):  
V.V. Tishchenko ◽  
Y.S. Raptis ◽  
E. Anastassakis ◽  
N.V. Bondar
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
Optical Studies

Optical studies of strained InGaAs/GaAs single quantum wells

1994 ◽  
Vol 78 (3) ◽  
pp. 315-320 ◽  
Author(s):  
W.Z. Shen ◽  
W.G. Tang ◽  
Z.Y. Li ◽  
X.C. Shen ◽  
S.M. Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Optical Studies

Temperature Dependent and Time Resolved Optical Studies of Single Quantum Wells Produced by Interrupted Growth MBE

1986 ◽  
Vol 77 ◽  
Author(s):  
B. S. Elman ◽  
Emil S. Koteles ◽  
C. Jagannath ◽  
Y. J. Chen ◽  
S. Charbonneau ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Single Quantum ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Molecular Beam Epitaxial ◽  
Decay Times ◽  
Higher Temperature ◽  
The Individual ◽  
Molecular Beam Epitaxial Growth

ABSTRACTMultiple peaks, recently observed in the low temperature photoluminescence (PL) spectra of GaAs/AlGaAs single quantum wells fabricated by momentarily interrupting the molecular beam epitaxial growth between adjacent but different semiconductor layers, have been interpreted as originating within smooth regions in the quantum well layer differing in width by exactly one monolayer. We have observed similar structure in similarly grown samples but find that low temperature PL can be misleading. However, higher temperature PL or PL excitation spectroscopy do provide unambiguous evidence for the model of interface smoothing due to growth interruption. Further, time-resolved spectra yield decay times of the individual peaks which are consistent with this idea.

scholarly journals Photoluminescence properties of GaAsBi single quantum wells with 10% of Bi

2021 ◽  
Vol 61 (2) ◽  
Author(s):  
E. Dudutienė ◽  
A. Jasinskas ◽  
B. Čechavičius ◽  
R. Nedzinskas ◽  
M. Jokubauskaitė ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Optical Transition ◽  
Single Quantum ◽  
Temperature Dependent ◽  
Single Quantum Well ◽  
Recombination Mechanism ◽  
Carrier Recombination ◽  
Pl Intensity ◽  
Sharp Interfaces

A set of single quantum well (SQW) samples of GaAs1-xBix with x ~ 0.1 and p-doped GaAs barriers grown by molecular beam epitaxy was investigated by the temperature-dependent photoluminescence (PL) spectroscopy. Those GaAsBi SQW structures showed a high crystalline quality, a smooth surface and sharp interfaces between the layers and exhibited a high PL intensity and a lower than 100 meV PL linewidth of QW structures. Temperature dependence of the optical transition energy was S-shape-free for all investigated structures and it was weaker than that of GaAs. An analysis of the carrier recombination mechanism was also carried out indicating that the radiative recombination is dominant even at room temperature. Moreover, numerical calculations revealed that a higher Be doping concentration leads to an increased overlap of the electron and heavy hole wave functions and determines a higher PL intensity.

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