Spectroscopic Techniques For Characterization Of Gas Phase Species In Plasma Etching And Vapor Deposition Processes

1984 ◽  
Author(s):  
Joda Wormhoudt ◽  
Alan C. Stanton ◽  
Joel A. Silver
Keyword(s):  
Gas Phase ◽  
Plasma Etching ◽  
Vapor Deposition ◽  
Spectroscopic Techniques ◽  
Deposition Processes

Laser Diagnostics of Semiconductor Processing Systems

1984 ◽  
Vol 38 ◽  
Author(s):  
Joda C. Wormhoudt ◽  
Alan C. Stanton ◽  
Joel A. Silver
Keyword(s):  
Gas Phase ◽  
Plasma Etching ◽  
Vapor Deposition ◽  
Laser Diagnostics ◽  
Semiconductor Industry ◽  
Spectroscopic Characterization ◽  
Detection Sensitivity ◽  
Semiconductor Processing ◽  
Laser Techniques

AbstractTwo processes of great importance in the semiconductor industry are vapor deposition and plasma etching. This paper presents a review of laser techniques for spectroscopic characterization of the gas phase species involved in these processes. Band strength and other spectroscopic data for selected molecules are used to give estimates of the detection sensitivity in vibrational and electronic bands. Preliminary results are given from work presently in progress in our laboratory on the detection of such species. The discussion includes examples of the application of these techniques to a number of laboratory deposition and etching devices.

Laser Spectroscopic Investigation of Gas-Phase Processes Relevant to Semiconductor Device Fabrication

1982 ◽  
Vol 17 ◽  
Author(s):  
R. F. Karlicek ◽  
V. M. Donnelly ◽  
W. D. Johnston
Keyword(s):  
Gas Phase ◽  
Plasma Etching ◽  
Vapor Deposition ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Spectroscopic Techniques ◽  
Gas Phase Reactions ◽  
Multicomponent Gas ◽  
Laser Spectroscopic

ABSTRACTChemical vapor deposition (CVD) and plasma etching are important gas-phase techniques used in fabricating semiconductor devices. These processes frequently involve poorly understood multicomponent gas-phase reactions which control reproducibility and product quality. Laser spectroscopic techniques have recently been developed to investigate CVD and plasma etching. These methods offer several advantages for probing complex systems. A comparison of various probing techniques will be presented, and recent results of laser spectroscopic investigations of plasma etching and CVD of silicon and III-V compounds will be reviewed.

Synthesis and characterization of sulfur-incorporated microcrystalline diamond and nanocrystalline carbon thin films by hot filament chemical vapor deposition

2003 ◽  
Vol 18 (2) ◽  
pp. 363-381 ◽  
Author(s):  
S. Gupta ◽  
B.R. Weiner ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Chemical Vapor ◽  
Sulfur Addition ◽  
Carbon Thin Films ◽  
Hot Filament

The synthesis of microcrystalline and nanocrystalline carbon thin films using sulfur as an impurity addition to chemical vapor deposition (CVD) was investigated. Sulfur-incorporated microcrystalline diamond (μc-D:S) and nanocrystalline carbon (n-C:S) thin films were deposited on Mo substrates using methane (CH4), hydrogen (H2), and hydrogen sulfide (H2S) gas feedstocks by hot-filament CVD. These films were grown under systematically varied process parameters, while the methane concentration was fixed at 0.3% and 2% for μc-D:S and n-C:S, respectively, to study the corresponding variations of the films’ microstructure. Through these studies we obtained an integral understanding of the materials grown and learned how to control key material properties. The nanocrystalline nature of the material was proposed to be due to the change in the growth mechanisms in the gas phase (continuous secondary nucleation). The growth rate (G) was found to increase with increasing TS and [H2S] in gas phase, thus following the chemisorption model that describes the surface reactions. One of the propositions for the increase was that H2S increases the production rates of methane and consequent methyl radicals without much of its own consumption, which is almost negligible and increases the carbon-containing species. This is analogous to the increase of G with increasing methane concentration, but for the relatively high S/C ratio used here, there is a possibility of its incorporation in the material, however small. This particular conjecture was verified. In this context, the results are discussed in terms of the decomposition of reactant gases (CH4/H2/H2S) that yield ionized species. The inferences drawn are compared to those grown without sulfur to study the influence of sulfur addition to the CVD.

Computational Study of Surface Deposition and Gas Phase Powder Formation during Spinel Chemical Vapor Deposition Processes

2013 ◽  
Vol 52 (44) ◽  
pp. 15270-15280 ◽  
Author(s):  
Hangyao Wang ◽  
Heather A. G. Stern ◽  
Debashis Chakraborty ◽  
Hua Bai ◽  
Vincent DiFilippo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Computational Study ◽  
Chemical Vapor ◽  
Surface Deposition ◽  
Powder Formation ◽  
Deposition Processes

Characterization of GaAs Surfaces Subjected to A Cl2/Ar High Density Plasma Etching Process

1996 ◽  
Vol 448 ◽  
Author(s):  
C.R. Eddy ◽  
O.J. Glembocki ◽  
V.A. Shamamian ◽  
D. Leonhardt ◽  
R.T. Holm ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Optical Measurement ◽  
Diffuse Reflectance Spectroscopy ◽  
Surface Damage ◽  
High Density ◽  
Ex Situ ◽  
Process Conditions ◽  
Spectroscopic Techniques ◽  
Density Plasma

AbstractHigh density plasma etching of III-V compound semiconductors is critically important to the development of advanced optoelectronic and high frequency devices. Unfortunately, the surface chemistry of these processes is not well understood. In an effort to monitor surface processes and their dependence on process conditions in a realistic etching environment, we have applied mass spectroscopic techniques for the study of GaAs etching in Cl2/Ar chemistry. Etch product chlorides were monitored, together with optical measurement of the surface temperature by diffuse reflectance spectroscopy, as pressure (neutral flux), microwave power (ion flux) and rf bias of the substrate (ion energy) were varied. Observations from the spectroscopic techniques were correlated with ex situ surface damage assessments of unpassivated surfaces by photoreflectance spectroscopy. As a result, insights are made into regions of process conditions that are well suited to anisotropic, low damage etching.

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