Developments In Large CdTe Substrate Growth

1983 ◽  
Author(s):  
L. Wood ◽  
E. R. Gertner ◽  
W. E. Tennant ◽  
L. O. Bubulac
Keyword(s):  
Cdte Substrate

Hg1−x−yMnxCdyTe Alloys for 1.3−1.8 μm Photodiode Applications

1986 ◽  
Vol 89 ◽  
Author(s):  
S. H. Shin ◽  
J. G. Pasko ◽  
D. S. Lo ◽  
W. E. Tennant ◽  
J. R. Anderson ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Reverse Bias ◽  
Fiber Optic ◽  
Superior Performance ◽  
Device Performance ◽  
Device Structure ◽  
Cdte Substrate ◽  
P Type

AbstractHgMnCdTe/CdTe photodiodes with responsivity cutoffs of up to 1.54 pm have been fabricated by liquid phase epitaxy (LPE). The mesa device structure consists of a boron-implanted mosaic fabricated on a p-type Hg1−x−yMnxCdyTe layer grown on a CdTe substrate. A reverse breakdown voltage (VB) of 50 V and a leakage current density of 1.5 × 10−4 A/cm2 at V = −10 V was measured at room temperature (295K). A 0.75 pF capacitance was also measured under a 5 V reverse bias at room temperature. This device performance based on the quaternary HgMnCdTe shows both theoretical and practical promise of superior performance for wavelengths in the range 1.3 to 1.8 μm for fiber optic applications.

Detection of cadmium oxides on a CdTe substrate by X-AES

1996 ◽  
Vol 352-354 ◽  
pp. 495-498 ◽  
Author(s):  
C. Debiemme-Chouvy ◽  
F.Iranzo Marín ◽  
U. Roll ◽  
M. Bujor ◽  
A. Etcheberry
Keyword(s):  
Cdte Substrate

Improvement of CdTe substrate quality by acoustic treatment

1999 ◽  
Vol 197 (3) ◽  
pp. 630-634 ◽  
Author(s):  
M Lisiansky ◽  
V Korchnoi ◽  
A Berner ◽  
E Muranevich ◽  
R Weil
Keyword(s):  
Substrate Quality ◽  
Cdte Substrate ◽  
Acoustic Treatment

Preparation and characterization of ZnTe as an interlayer for CdS/CdTe substrate thin film solar cells on flexible substrates

2013 ◽  
Vol 535 ◽  
pp. 202-205 ◽  
Author(s):  
Xianjin Feng ◽  
Kartikay Singh ◽  
Sushma Bhavanam ◽  
Vasilios Palekis ◽  
Don L. Morel ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Flexible Substrates ◽  
Cdte Substrate

Lattice imaging of CdS/CdTe solar cell interface

1983 ◽  
Vol 41 ◽  
pp. 124-125
Author(s):  
T. Yamashita ◽  
J.G. Werthen ◽  
R.H. Bube ◽  
R. Sinclair
Keyword(s):  
Solar Cell ◽  
Surface Preparation ◽  
Chemical Identification ◽  
Lattice Imaging ◽  
Subsequent Growth ◽  
Cdte Solar Cell ◽  
Lattice Images ◽  
Cdte Substrate ◽  
Cds Film ◽  
Cell Interface

The structure of electrically characterized CdS/CdTe solar cell interfaces has been analyzed by high resolution lattice imaging. The effects of CdTe substrate orientation and surface preparation on the subsequent growth of CdS and the structure at the interface were investigated. The CdS film was deposited on a p-CdTe substrate by e-beam evaporation, and the resulting structure was electrically characterized. The TEM specimens were prepared in cross-section, and ion-milled to electron transparency. A Philips EM400ST microscope with a point resolution of ∼3.5 Å was used for lattice imaging. Chemical identification of the deposited layer was always made by EDS prior to any structural analysis. The lattice images were obtained in the CdTe <110> projection, and 19 beams (out to (004) reflections) were admitted through the objective aperture to form the image.

Digital Electrochemical Etching of Compound Semiconductors

1991 ◽  
Vol 237 ◽  
Author(s):  
Q. Paula Lei ◽  
John L. Stickney
Keyword(s):  
Electrochemical Cell ◽  
Electrochemical Etching ◽  
Compound Semiconductors ◽  
Atomic Layer ◽  
Atomic Level ◽  
Level Control ◽  
Square Wave ◽  
Etching Method ◽  
Cdte Substrate ◽  
Initial Results

AbstractThe principles for an electrochemical digital etching method for compound semiconductors are described and initial results reported. The method is designed to allow atomic level control over the etching process, resulting in the removal of a bilayer of the compound for each cycle. An atomic layer of one element is removed at one potential and then an atomic layer of the second element is removed at a second potential to complete one cycle. The results reported here are for the etching of CdTe. For CdTe, Te is stripped by reduction to Te2- while Cd is stripped by oxidation to Cd2+. Underpotentials are chosen so that only the top atomic layer of an element is removed. Potentials sufficient to strip the elemėnt from the bulk of the CdTe substrate are avoided. Application of the method should involve the use of a simple electrochemical cell, with solution convection. The substrate is placed in the cell and a square wave applied, where each cycle results in the dissolution of a bilayer of the compound. The two potentials of the square wave correspond to underpotential stripping potentials for Cd and Te respectively. Directions for the future development of this etching method are discussed.

scholarly journals Challenges and prospects for developing CdS/CdTe substrate solar cells on Mo foils

2014 ◽  
Vol 124 ◽  
pp. 31-38 ◽  
Author(s):  
B.L. Williams ◽  
J.D. Major ◽  
L. Bowen ◽  
L. Phillips ◽  
G. Zoppi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Cdte Substrate

Laser growth of CdTe epitaxial film on CdTe substrate

1993 ◽  
Vol 16 (1-3) ◽  
pp. 64-67 ◽  
Author(s):  
C. Coutal ◽  
J.C. Roustan ◽  
A. Azema ◽  
A. Gilabert ◽  
P. Gaucherel ◽  
...  
Keyword(s):  
Epitaxial Film ◽  
Cdte Substrate

The effect of CdTe substrate orientation on the Movpe growth of CdxHg1−xTe

1986 ◽  
Vol 79 (1-3) ◽  
pp. 940-945 ◽  
Author(s):  
J.E. Hails ◽  
G.J. Russell ◽  
A.W. Brinkman ◽  
J. Woods
Keyword(s):  
Substrate Orientation ◽  
Movpe Growth ◽  
Cdte Substrate

The Effects of Surface Treatments for Low Temperature Silicon Dioxide Deposition on Cadmium Telluride.

1988 ◽  
Vol 131 ◽  
Author(s):  
Seong S. Choi ◽  
S. S. Kim ◽  
D. V. Tsu ◽  
G. Lucovsky
Keyword(s):  
Low Temperature ◽  
Plasma Treatment ◽  
Cadmium Telluride ◽  
Chemical Vapor ◽  
High Energy ◽  
Native Oxide ◽  
Strong Adhesion ◽  
Cdte Substrate ◽  
Oxide Removal ◽  
Cdte Surface

ABSTRACTWe have successfully deposited thin films of SiO2 on a cadmium telluride substrate at low temperature (Ts =100°C–300°C) by remote plasma enhanced chemical vapor deposition (Remote PECVD). The native oxide on the CdTe substrate has been removed, prior to deposition by either chemical etching in methanol and 1% bromine, or by dissolution in deionized water. After removal of the native oxide, the CdTe was inserted into a UHV-compatible deposition chamber and a He+ plasma treatment was performed prior to deposition of an SiO2 film. This treatment promotes strong adhesion between the deposited SiO2 film and the CdTe surface. We find that the initial oxide removal process does not influence SiO2 adhesion. The effect of the He+ plasma treatment on the CdTe surface has been studied by Auger electron spectroscopy(AES), and Reflection high energy electron diffraction (RHEED).

Sign in / Sign up

Export Citation Format

Share Document