Large-signal modeling of hexagonal (4H-) SiC based double drift transit time device as high-power MM-wave source at W-band window frequency

2012 ◽  
Author(s):  
Moumita Mukherjee ◽  
Diptadip Chakraborty
Keyword(s):  
Transit Time ◽  
High Power ◽  
Signal Modeling ◽  
Large Signal ◽  
Wave Source ◽  
W Band

scholarly journals Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

2021 ◽  
Vol 11 (19) ◽  
pp. 9017
Author(s):  
Jinho Jeong ◽  
Yeongmin Jang ◽  
Jongyoun Kim ◽  
Sosu Kim ◽  
Wansik Kim
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Common Source ◽  
High Electron ◽  
Large Signal ◽  
Power Added Efficiency ◽  
W Band ◽  
Gan On Si

In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

Design and Large-Signal Modeling of a $W$ -Band Dielectric TWT

2017 ◽  
Vol 45 (10) ◽  
pp. 2820-2834 ◽  
Author(s):  
Jeffrey P. Calame ◽  
Alan M. Cook
Keyword(s):  
Signal Modeling ◽  
Large Signal ◽  
W Band

On the large-signal modeling of High Power AlGaN/GaN HEMTs

2012 ◽  
Author(s):  
I. Angelov ◽  
M. Thorsell ◽  
K. Andersson ◽  
N. Rorsman ◽  
E. Kuwata ◽  
...  
Keyword(s):  
High Power ◽  
Signal Modeling ◽  
Large Signal ◽  
Gan Hemts

scholarly journals Force detection of high-frequency electron spin resonance near room temperature using high-power millimeter-wave source gyrotron

2021 ◽  
Vol 118 (2) ◽  
pp. 022407
Author(s):  
Hideyuki Takahashi ◽  
Yuya Ishikawa ◽  
Tsubasa Okamoto ◽  
Daiki Hachiya ◽  
Kazuki Dono ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Millimeter Wave ◽  
Electron Spin ◽  
High Power ◽  
High Frequency ◽  
Room Temperature ◽  
Force Detection ◽  
Wave Source ◽  
Spin Resonance ◽  
Millimeter Wave Source
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